Papers by Keyword: Polishing

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Authors: Wu Sheng Luo, Cheng Yong Wang, Yue Xian Song, Yan Pei Liao
Abstract: We compared the characteristics and polishing effect of abrasive suspension slurry jets with and without high polymer added. Results show that adding high polymer to the slurry jet leads to more concentrated jet beam and, consequently, surface roughness in the jet polished region is approximately equal and the interface between polished and unpolished regions is narrowed. We also examined the surface forming process polishing with slurry jet added with high polymer, and then proposed a polishing model of the process.
Authors: Hsin Min Lee, Kun Ling Wu
Abstract: This study examines the feasibility of using high-porosity and conductive bamboo charcoal in electrophoretic deposition (EPD)-assisted polishing of silicon wafers and explored the influence of various parameters on surface roughness. EPD-assisted polishing with bamboo charcoal offers an alternative to the lapping process prior to CMP. According to the results, the best parameter combination obtained under the current experimental setting is machining time, 12 min; rotational speed of platen, 75 rpm; and voltage, 6V. EPD indeed contributes to more effective and efficient polishing, with better surface quality attained within a shorter machining time.
Authors: Wei Min Lin, Hitoshi Ohmori, T. Suzuki, Yoshihiro Uehara, Y. Watanabe, Shinya MORITA
Abstract: A new CAD system, which is called Volume-CAD (VCAD) have been developed. We carried out research and development of VCAD fabrication process based on VCAD/CAM precision control. In this study, a developed V-CAM had been used for a polishing fundamental experiment of a free form surface. The relationship between NC resolution and form accuracy of polished surface are discussed.
Authors: X. Kerbiriou, A. Greddé, Marie France Barthe, P. Desgardin, G. Blondiaux
Authors: M. Kanaya, Hirokatsu Yashiro, Noboru Ohtani, Masakazu Katsuno, J. Takahashi, S. Shinoyama
Authors: Shinichi Nakashima, Takeshi Mitani
Abstract: Raman spectroscopy using deep UV (DUV) light excitation has been applied to characterizing process-induced defects in surface layers in SiC. Raman spectra of P+-ion implanted and post annealed SiC have been measured as a function of dose level and annealing temperature. The recovery of the crystallinity and electrical activity have been evaluated. Precipitation of excess phosphorus was found in heavily doped specimens. High dose implanted and post annealed samples show uneven distribution of residual defects, which is demonstrated by mapping of Raman bandwidth. Damage in 4H-SiC surfaces, which were mechanically polished with various sizes of abrasives, has been evaluated from DUV micro-Raman measurements. The Raman analysis demonstrates that bandwidth and peak frequency can be used as monitors of the polish–induced damage. It is found that localized defects reducing free carrier density remain even after polishing with small sized abrasives.
Authors: Hui Deng, Masaki Ueda, Kazuya Yamamura
Abstract: A novel polishing technique combined with the irradiation of atmospheric pressure plasma known as plasma assisted polishing (PAP) is proposed for the finishing of difficult-to-machine materials. In this paper, we mainly focus on the case of 4H-SiC substrate. We used helium-based water vapour plasma to modify the mechanical and chemical properties of the SiC surface. The results of X-ray photoelectron spectroscopy (XPS) measurements indicate that the surface was efficiently oxidized after plasma irradiation, and the main product was silicon oxide. A small amount of silicon oxycarbide was also observed which was identified as the interface oxide. The result of a nanoindentation test revealed that the hardness of oxidized SiC surface decreased by one order of magnitude compared with the unprocessed surface. The decrease of hardness of modified surface enables us to flatten the surface without forming any scratches and subsurface damage by using soft abrasive compared with the base material. We used CeO2 as the abrasive material in PAP, the hardness of which was near to that of the oxidized surface. The microscopic interferometer images of the PAP processed surface showed us that scratches disappeared and surface roughnesses also decreased from 4.410 nm p-v, 0.621 nm rms to 1.889 nm p-v, 0.280 nm rms. From the atomic force microscopy (AFM) images, a step and terrace structure was observed on the surface after PAP, which means that an atomically flat surface was obtained. We conducted reflection high-energy electron diffraction (RHEED) measurement to evaluate the residual strain of the PAP processed surface. The results indicate that the lattice constants approached the ideal value, which meansthat the PAP technique did not introduce crystallographical subsurface damage.
Authors: Hong Ho Cheng, C.C. Chen
Abstract: Diamond has been well recognized a strategic engineering material. It possesses excellent physical and chemical properties including the highest hardness and thermal conductivity, and good resistance to chemical erosion. Although CVD diamond film has good potential outstanding properties, its industrial applications have been limited by the non-uniform thickness and rough surface. In the current study, the CVD diamond film is polished by the chemical-assisted mechanical method with different slurries. These slurries contain strong oxidation chemical and diamond powder. During the process, the diamond film was held against the rotational ceramic plate with transverse oscillation at 90 °Cor lower. The profilometer, atomic force microscope and scanning electron microscope were used to evaluate the surface integrity of the diamond films before and after polishing. Based on the experimental results, the slurry containing potassium persulfate (K2S2O8) produces the highest material removal rate while potassium permanganate (KMnO4) develops the best local surface roughness. The strategy of using potassium persulfate for coarse polishing followed by potassium permanganate for fine polishing yields the diamond films of the best global surface roughness. The average surface roughness of the diamond film produced by the proposed technique is below 10 nm after 5 hours.
Authors: V.D. Heydemann, W.J. Everson, Rick D. Gamble, David Snyder, Marek Skowronski
Authors: Khaled Hamouda, Tahar Sayah, J.P. Ankudimov, P.J. Ankudimov, Anatoly P. Babichev, Mohamed Nadjib Benallal, D. Saidi, M.A. Djema
Abstract: The general purpose of the present work is based on an antifriction process to produce a metallurgical powder from nibs of iron powders base. Therefore, most of these processes used in motors and instruments industries, vehicles and agricultural mechanical engineering. Under normal operation conditions, which have stable climatic characteristics and exhibit to moisture, this increased the layer that exposed to corrosion. Metallurgical powder adsorbed moisture by determining the porosity which accelerates corrosion processes and increases at the free surface of metal, In this article, the results given for the materials of powders with bases on iron, zinc, aluminium and their alloys, in the same processes can be using it in the maintenance field to eliminate or modifying the surface of the work pieces treated which that increases the hardness.
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