Papers by Keyword: Proton Implantation

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Authors: John W. Steeds, N. Peng, W. Sullivan
Abstract: 1 MeV ion implantations of 4H SiC have been performed to various doses with ion probes of 5 µm diameter. Defect introduction has been studied by microscopic photoluminescence.
Authors: Andreas J. Schriefl, Sokratis Sgouridis, Werner Schustereder, Werner Puff
Abstract: The microscopic nature of hydrogen decorated defect complexes created by proton implantation in silicon and subsequental annealing is not well understood yet. We investigated the defects and donator complexes using positron lifetime measurements and Doppler-broadening spectroscopy. In particular, the influence of variations in implantation dose, annealing temperature and annealing time on crystal defects were examined in Czochralski and in float zone silicon samples. Due to well known positron lifetimes in silicon an identification of certain defect complexes was possible.
Authors: Moriz Jelinek, Johannes G. Laven, Naveen Ganagona, Reinhart Job, Werner Schustereder, Hans Joachim Schulze, Mathias Rommel, Lothar Frey
Abstract: Two metastable defects with energy levels at Ec-0.28eV and Ec-0.37eV, which previously have been reported in proton implanted- and in proton implanted and annealed crystalline silicon are discussed. Recent results on the peculiar behavior of these defects upon periodical application of two different bias conditions during DLTS measurement are reviewed. Two specifically designed DLTS measurement sequences are proposed in order to further reveal the defects transformation rates and respective activation energies.
Authors: Peter Sperr, Gottfried Kögel, W. Bauer-Kugelmann, Werner Triftshäuser, Masanori Fujinami
Authors: N.Y. Tang, Hao Yang Cui
Abstract: The light-emission efficiency of InAs/GaAs quantum dots (QDs) affected by proton implantation and subsequent annealing is investigated. The photoluminesce (PL) intensity is determined by the carrier capture time and non-radiative center (NRC) lifetime. The intermixing-induced carrier capture enhancement and the implantation-induced NRC generation mutually compete, so there exists a critical implantation dose (). When is less than , the intermixing is the main effect and the PL intensity increases with . On the other hand, when is larger than , the implantation damage is so large that the intensity decreases with the dose. The higher the annealing temperature is, the larger becomes.
Authors: R. Jones, B.J. Coomer, Jonathan P. Goss, B. Hourahine, A. Resende
Authors: G.Q. Jiang, C. Xu, M. Xun, J. Wang
Abstract: We have designed and fabricated 1×2 VCSEL arrays with different inter-element spacing. Then, through the measurement of the near-fields and far-fields of the VCSEL arrays, the in-phase and out-of-phase mode depending on the inter-element spacing have been analyzed. Finally, the simulated far-field profiles by FDTD Solutions software agree well with the experiments.
Authors: Marie France Barthe, P. Desgardin, L. Henry, C. Corbel, D.T. Britton, Gottfried Kögel, Peter Sperr, Werner Triftshäuser, Patrice Vicente, L. diCioccio
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