Papers by Keyword: PST Thin Film

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Authors: Xiao Hua Sun, Sheng Gang Zhou, Zhi Meng Luo, Shuang Hou, Tian You Peng, Xing Zhong Zhao
Abstract: Pb0.3Sr0.7TiO3 (PST) and 4.5 mol% Mn doped Pb0.3Sr0.7TiO3 (PSTMn) thin films as well as PST/PSTMn/PST/PSTMn/PST (ML-a) and PSTMn/PST/PSTMn/PST/PSTMn (ML-b) multilayered thin films have been fabricated on Pt/Ti/SiO2/Si substrate with sol–gel method. The structure and surface morphology of PST, PSTMn, ML-a and ML-b thin films were investigated by x-ray diffraction (XRD) and atom force microscopy (AFM). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz and at room temperature. It was found that the surface microstructure of multilayered thin films is influenced by deposition sequence and the dielectric constant and tunability of two multilayered thin films lie between that of PST and PSTMn thin films. However, two multilayered thin films have higher the figure of merit (FOM) for lower dielectric loss. The FOM of PST and PSTMn single-component films as well as ML-a and Ml-b multilayered films are 14.2, 14.6, 16.3 and 20.2, respectively. Our results showed that multilayer structure can improve the comprehensive dielectric tunable performance of PST film.
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Authors: Zan Zheng, Xiao Ting Li, Gao Rong Han, Wen Jian Weng, Pi Yi Du
Abstract: (PbySr1-y)ZnxTi1-xO3-x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology, and dielectric properties of thin films were investigated by XRD, SEM and impedance analyzer, respectively. The perovskite phase structure was exhibited in the Zn-doped PST thin films. The formation ability of the thin films of the perovskite phase and its grain size decreased with the increase in doping Zn. The dielectric constant of the thin film was influenced by oxygen vacancies which could be controlled by Zn doping.
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Authors: Xiao Hua Sun, Shuang Hou, Xiu Leng Li, Tian You Peng, Xing Zhong Zhao
Abstract: Fe-doped Pb0.3Sr0.7TiO3 (PST) thin films have been fabricated on Pt/Ti/SiO2/Si substrates with sol–gel method. The structure and surface morphology of Fe-doped PST thin films were investigated as a function of Fe concentration by x-ray diffraction (XRD) and atomic force microscopy (AFM). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz at room temperature. It’s found that the dielectric constant, dielectric loss and tunability of Fe-doped PST films decreased with the increase of Fe content. The effects of Fe doping on the microstructure, dielectric and tunable properties of thin films were analyzed. Though the undoped PST thin film exhibited the highest dielectric constant of 2011 and the largest tunability of 76%, the 6 mol% Fe doped PST thin films had the highest figure of merit (FOM) of 17.9 for its lowest dielectric loss.
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