Papers by Keyword: PZT Thin Film

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Authors: José R. A. Fernandes, Ednan Joanni, Raluca Savu
Abstract: Thin films of PbZr0,52Ti0,48O3 (PZT) for applications in piezoelectric actuators were deposited by the pulsed laser deposition technique (PLD) over Pt/Ti/SiO2/Si substrates. The effect of different electrode and PZT deposition and processing conditions on the ferroelectric and piezoelectric properties of the devices was investigated. X-Ray diffraction results showed that the deposition temperature for the electrodes had a strong influence on the PZT orientation; the increase in the electrode deposition temperature changes the PZT orientation from random or (111) to (001) depending also on PZT deposition pressure. From scanning electron microscope (SEM) pictures one could also observe that the deposition pressure affects the porosity of the PZT films, which increases with the pressure above 1×10-1 mbar for films deposited at room temperature. The measurement of the ferroelectric hysteresis curves confirmed that the structural changes induced by different processing parameters affected the ferroelectric properties of the material. The best ferroelectric properties including fatigue endurance were obtained for electrodes made at high temperature and for PZT deposited at 2×10-2 mbar and heat treated at 675°C for 30 minutes in an oxygen atmosphere. The piezoelectric coefficient d33, measured using a Michelson interferometer, had values in the range between 20 and 60 pm/V, and showed a strong dependence on the thickness of the PZT films.
Authors: Tomoya Ohno, Masayuki Fujimoto, Hisao Suzuki
Abstract: This paper describes the deposition of PZT thin films on soda-lime glass substrate with ITO bottom electrode by CSD (Chemical Solution Deposition). The transmittance of the obtained PZT thin film on ITO/glass substrate was about 60 % in the visible light region. The deposited transparent PZT thin film exhibited the ferroelectricity of Pr=36.3 μC/cm2 and Ec=71.3 kV/cm. In addition, the piezoelectric property of the resultant PZT thin film was relatively large and exhibited the measured effective d33 of 120 pC/N after the polarization.
Authors: Dong Yan Tang, Xiao Hong Zhang, Ying Jie Qiao, Y. Li
Abstract: The oriented La modified PZT thin films were prepared on Pt/Ti/SiO2/Si substrate by the LB technique. The pre-sintering temperatures and the annealing temperatures for La modified PZT were determined by TG-DTA curves and XRD detect results. XRD detection of PZT and PZT with different La amount illustrated the crystal constructions and the effects by modification. The AFM observation of PLZT thin films with organic acid indicated that the LB technique could obtain smooth and flat film with the deposition of PLZT particles within nanometers on substrate. The detection results of the electrical properties indicated that the modification of La had great influence on the electric properties of LB thin film. PLZT thin film by annealing at 650°C had better dielectric constant of 569.2 and dielectric loss of 0.4915 at 5 kHz. And the amount of La of 2% in mass gave the piezoelectric constant of 14pC/N.
Authors: Jiu Peng Zhao, C.Y. Juan, Liang Sheng Qiang
Abstract: In this work, PZT (Zr/Ti=52/48) thin films have been prepared using aqueous organic gel method. The desired metal cations are chelated in a solution using citric acid and ethylenediaminetertraacetic acid (EDTA) as the chelating agents. The thermal decompostion of the metal carboxylate precursors gels have been studied by TG/DTA and the products derived from calcinations of the gels at different temperatures have been characterized by XRD and SEM. By heat-treatment at 650°C for 2h, PZT thin films with smooth and crack-free surface could be achieved. The thickness of each layer was 50nm. Electric properties measurement indicated that the PZT films demonstrated a ferroelectric hysteresis loop. The remanent polarization(Pr) and coercive field (Ec) were 20.7μC/cm2 and 75.5kV/cm, respectively. The dielectric constant and the dielectric loss at 100 kHz of the films were 930 and 0.045, respectively.
Authors: Dionizy Czekaj
Abstract: The radio frequency (RF) sputtering method was utilized to grow PZT-based ferroelectric thin films with the chemical composition Pb(Zr0.53Ti0.45W0.01Cd0.01O3). The thin films were characterized in terms of their microstructure, crystalline structure, chemical composition and dielectric properties. The processing conditions diagram was defined, which ensured conservation of stoichiometry of the chemical composition of the thin films. Complex impedance spectroscopy was used to measure frequencydependent dielectric properties of the PZT-type thin films. Great application potential of the PZT-based thin films was considered and possibility to employ as-obtained PZT thin films as active elements of the piezoelectric sensors was reported.
Authors: Shun Fa Hwang, Wen Bin Li
Abstract: PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar:O2=25:0 sccm, Ar:O2=20:5 sccm, or Ar:O2=15:10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.
Authors: Yong Deng, Yi Gui Li, Chun Sheng Yang, Jing Quan Liu, Dan Nong He, Susumu Sugiyama
Abstract: The objective of this work was the development of a technology for the fabrication of piezoelectric PZT thin films from bulk PZT on silicon wafer for micro power harvester applications. With the lapping technique, the thickness of bulk PZT was reduced from 300µm to 10µm at the top data. KOH etching for silicon was used to thin the thickness of silicon cantilever from 300µm to 15µm at the top data. The piezoelectric coefficient d31 was measured to be -12pC/N. Resonance frequency measurements on a 4mmX1mmX0.06mm cantilever resulted in a value of 430Hz, and the voltage output was around 0.68V at 1g acceleration. The result shows that the fabrication process is quite feasible.
Authors: Jian Shen, Huai Wu Zhang
Abstract: Polycrystalline Pb(Zr0.55T0.45)O3thin film was deposited on Pt/Ti/SiO2Si(100) by radio-frequency-magnetron sputtering method, the writing of charge bits and the polarization relaxation phenomena on the surface of PZT thin film was studied by Kelvin probe force microscopy and Piezoresponse force microscopy, respectively. It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones, and the charge accumulates remarkably in high vacuum but relax more quickly. The domain images (contrast) reveal that the polarization magnitude is determined by the orientation of each grain, which is proved by the Ref 14. Taking the polarized area as whole, the relaxation of polarization magnitude (contrast) show that the polarized state in some grain can maintain at leas¬t 105s, but in other grain, the polarization disappear relatively quickly.
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