Papers by Keyword: Quantum Wire

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Authors: Ulhas S. Sonawane, E.P. Samuel, Chetan Kasar, D.S. Patil
Abstract: Using Transfer Matrix Method (TMM) the Eigen energy of the GaN/AlGaN quantum wire has been evaluated. Peak density results show the confinement and tunneling of electron distribution in quantum wire due to band offset of GaN (wire region) and AlGaN (barrier region). The impact of this band offset results in variation in Eigen energy and is significant in Tunneling phenomenon study to realize the transmission coefficient across the cross-section. Our analysis reveals that for wider wires transmission coefficient reaches to its peak for lower Eigen energy values. Likewise, increase in aluminum mole fraction in AlGaN decreases tunneling effect.
Authors: Kinichi Masuda-Jindo, R. Kikuchi, Seizo Obata, M. Menon
Authors: Sh.G. Gasparyan
Abstract: The effect of a longitudinal magnetic field and the dielectric constants mismatch of a size- quantized wire and surrounding medium on the impurity scattering of charge carriers is considered. The expressions for the momentum relaxation rate are carried out for scattering on charged Coulomb centers located on the wire axis. The dependences of the momentum relaxation rate on the magnetic field induction, dielectric inhomogeneity parameter, and also on the wire radius are obtained.
Authors: Xiao Dong Dong, Jun Hua Liu, Yong Xia
Abstract: Stable iron quantum wire with atomic-scale was successfully fabricated and electrically characterized with an electrochemical method in solution by a home-made electrochemically controlled system. By careful controlling the etching/deposition process, stepwise conductance behavior could be clearly observed. The I-V curve of the formed iron quantum wire showed the ohmic behavior with low bias voltage. The work is of great significance for molecular electronics, interface electrochemistry and sensing.
Authors: H. Mariette, C. Gourgon, L.S. Dang, C. Vieu, N. Pelekanos, W.W. Rühle
Authors: A.A. Darhuber, H. Straub, S.O. Ferreira, W. Faschinger, H. Sitter, E. Koppensteiner, G. Brunthaler, G.H. Bauer
Authors: Jian Qing Liu, Yong Hai Chen, Bo Xu, Zhan Guo Wang
Abstract: We have fabricated site-controlled InAs quantum wires (QWRs) on the cleaved surface (110) of AlGaAs/GaAs superlattices (SLs) structures by using Ga-assisted deoxidation method. In the surface of SLs regions, InAs QWRs were nucleated on GaAs in stead of AlGaAs. In the (110) surface without superlattices(SLs) structures, QDs with a large size were obtained, which is considered hard to realize. To understand the different InAs growth phenomena in the regions with and without superlattices structures, we suggest that indium adatoms have an apparent trend to migrate to the SLs area.
Authors: Andreas Fissel
Abstract: The different aspects of molecular beam epitaxy (MBE) for producing two-dimensional (Quantum well), one-dimensional (Quantum wire and rod), and zero-dimensional (Quantum dot) structures based on SiC for functional applications are discussed. Development and implementation of a suitable MBE growth procedure for fabrication of heteropolytypic layer sequences are demonstrated in context with thermodynamic considerations. Furthermore, the growth of onedimensional structures based on cubic wires and nanorod arrays, also grown on Si(111), is shown. Moreover, the perspectives of quantum dot structures and a novel way to form 3C-SiC-dot structures within α-SiC has been discussed.
Authors: Clivia M. Sotomayor Torres, A. Ross, Y.S. Tang, A. Ribayrol, S. Thoms, A.S. Bunting, He Ping Zhou, K. Tsutsui, H. McLelland, H.P. Wagner, B. Lunn, D.E. Ashenford
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