Papers by Keyword: Radiation Damage

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Authors: V.A. Skuratov, S.M. Abu-Al Azm, V.A. Altynov
Authors: Li Cai, Toshio Hirao, Hiroaki Yano, Zong Fan Duan, Hideharu Takayanagi, Hideharu Ueki, Takeshi Ohshima, Yasushiro Nishioka
Abstract: Electrical characterization of 60Co γ-ray radiation effects on pentacene-based organic thin-film-transistors having two kinds of gate insulator have been carried out. For transistors with SiO2 gate insulator, the threshold voltage shifts are consistent with positive charge trapping in the oxide and a “rebound” effect is observed. This “rebound” effect is attributed to the negatively charged interface traps generated during irradiation. For polyimide gate insulator, the threshold voltage continually decreases with an increasing total-dose. At total-dose of 1200 Gy (Si), for the SiO2 gate insulator, the field-effect mobility decreased by almost 80%, and for polyimide gate insulator, it decreased by 40%.
Authors: Haider F. Abdul Amir, Abu Hassan Husin, Saafie Salleh, Fuei Pien Chee
Abstract: Neutron bombardment on semiconductor material causes defects, one such primary physical effect is the formation of displacement defects within the crystal lattice structure, and such defects effectively decrease the mean free path and thus shorten the recombination time. Ionizing radiation causes creation of electron-hole pair in the gate oxide and in parasitic insulating layers of the MOS devices. Calculations show increase of the dark current in depletion region caused by a single neutron. Determination of energy and angular distribution of primary knock on atoms, with 14 MeV neutron irradiation in silicon are presented.
Authors: J. del Río, N. de Diego, P. Moser
Authors: Y.P. Ali, V.P. Salvi, A.M. Narsale, B.M. Arora, D. Kanjilal, G.K. Mehta
Authors: P.J. Simpson, U.G. Akano, P.J. Schultz, I.V. Mitchell
Authors: T. Egilsson, Anne Henry, Ivan G. Ivanov, J. Lennart Lindström, Erik Janzén
Authors: V. Khomenkov, D. Bisello, M. Boscardin, Mara Bruzzi, A. Candelori, G.-F. Dalla Betta, A.P. Litovchenko, C. Piemonte, R. Rando, F. Ravotti, N. Zorzi
Abstract: Radiation hardness of silicon detectors based on thin epitaxial layer for the LHC upgrade was studied. No type inversion was observed after irradiation by 24 GeV protons in the fluence range (1.5–10)⋅1015 cm–2 due to overcompensating donor generation. After long-term annealing highly irradiated devices show decrease of effective doping concentration and then undergo type inversion. All mentioned means that thin epitaxial devices might be used for innermost layers of vertex detectors and need moderate cooling during beam off time. Properly chosen scenario might help to restore their working characteristics.
Authors: William Cunningham, M. Cooke, J. Melone, M. Horn, V. Kazukauskas, P.R. Roy, F. Doherty, M. Glaser, Juozas Vidmantis Vaitkus, Mahfuzur Rahman, D. Rezel
Authors: Seung Chul Park, Gordon Davies, Victor Higgs, William D. Sawyer
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