Papers by Keyword: Rapid Thermal Annealing (RTA)

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Authors: Tai Long Gui, Si Da Jiang
Abstract: Using the radio frequency magnetron sputtering that directly bombardment A1N target under different sputtering-power and total pressure to deposit the A1N thin films. The crystal structure, composition, surface and refractive index of the thin films were studied by XRD, SEM, AFM and elliptical polarization instrument. The results show that the surface and refractive of the thin films strongly depends on the sputtering-power and total pressure,the good uniformity and smoothness is found at 225 W, Ar flow ratio 5.0 LAr/sccm, substrate temperature 100°Cand 1.2 Pa. All film thickness are from 60 to 80nm, and the highest N/Al mole ratio reach to 0.83.The crystal structure of the as-deposited thin-films is amorphous,then it transforms from blende structure to wurtzite structure as the rapid thermal annealing(RTA) temperature changes from 600 to 1200°C. The refractive index also increases with the RTA temperature it is increasing significantly from 800 to 1000°C. When the Annealing temperature at 1000°C, we get the best uniformity and smoothness of the surface of the film.
Authors: Sung Jin Cho, Cong Wang, Nam Young Kim
Abstract: In the process of characterizing AlGaN/GaN HEMTs on Si (111), Sapphire, 4H-SiC substrates, various Rapid Thermal Annealing (RTA) conditions for the Ti/Al/Ta/Au ohmic contact process and the resulting surface analysis have been investigated. In order to achieve a low ohmic contact resistance (RC) and a high quality surface morphology, we tested seven steps (800 °C to 920 °C) annealing temperatures and two steps (15, 30 sec) annealing times. According to these annealing temperatures and times, the optimal ohmic resistance of 3.62 × 10-6 Ohm • cm2 on Si(111) substrate, 9.44 × 10-6 Ohm • cm2 on Sapphire substrate and 1.24 × 10-6 Ohm • cm2 on 4H-SiC substrate are obtained at an annealing temperature of 850 °C and an annealing time of 30 sec, 800 °C and an annealing time of 30 sec and 900 °C and an annealing time of 30 sec, respectively. The surface morphologies of the ohmic contact metallization at different annealing temperatures are measured using an Atomic Force Microscope (AFM). AFM morphology Root Mean Square (RMS) level determines the relationship of the annealing temperature and the annealing time for all of the samples. According to these annealing temperatures and times, the optimal ohmic surface RMS roughness of 13.4 nm on Si(111) substrate, 3.8 nm on Sapphire substrate and 2.9 nm on 4H-SiC substrate are obtained at an annealing temperature of 850 °C and an annealing time of 30 sec, 800 °C and an annealing time of 30 sec and 900 °C and an annealing time of 30 sec, respectively.
Authors: Bo Lojek
Abstract: Since introducing Rapid Thermal Annealing, there has been disagreement among experimental data of ion-implanted and annealed layers. One explanation of these differences is the impact of optical irradiation and its interaction with semiconductor material. Although no plausible explanation has been offered, experimental evidence of “photonic effects” was reported in many works. In this work we estimate energy per atom available during recombination of the excited carriers. It is argued that the localization of energy states inside the band gap in ion-implant damaged material is responsible for “photonic effects.”
Authors: Te Sheng Li, Ling Hui Chen
Abstract: In this study, a novel nanogap fabrication technique is proposed. The technique is based on electron-beam lithography combined with rapid thermal annealing (RTA) to reduce the self-aligned nanogap on metal layer. The procedure running through systematic experimental design via Taguchi method and considering the critical factors such as metal type, Si thickness, RTA temperature, RTA time and initial nanogap dimension affecting the final nanogap dimensions was optimized. The experiments were conducted using Taguchi method and modified particle swarm optimization for setting the optimal parameters. The experimental results show that the most important factors in nanogap reduction were the metal type and the initial nanogap. The optimal parameter settings were metal type Pt on 50 nm Si/SiO2, 400°C, 60s and 43nm for initial gap. Experiment results found that the metal type Pt provided larger shrink ratio than that of Ni and nanogap down to 30 nm. It is also noted that the proposed approach was reproducible due to the confirmation experiments SNRs within the 95% confidence interval.
Authors: Thomas Feudel
Abstract: We have extensively studied the impact of advanced annealing schemes for highperformance SOI logic technologies. Starting with the 130 nm technology node, we introduced spike rapid thermal annealing (sRTA). Continuous temperature reduction combined with implant scaling helped to improve transistor performance and short channel behavior. During the development of the 90 nm technology we evaluated flash lamp and laser annealing (FLA). These techniques became an essential part of the 65 nm node. At this node we also faced major challenges in terms of compatibility with new materials like SiGe as well as the need for reduction of process parameter fluctuations. Scaling will be continued with the 45 nm technology node towards a truly diffusionless process.
Authors: K.Y. Cheong, Wook Bahng, Nam Kyun Kim
Abstract: In this paper, the electrical properties of pre- and post-rapid thermal annealed 4H SiC-based gate oxide grown in 10% nitrous oxide (N2O) and in dry oxygen have been investigated, compared, and reported for the first time. After treating the nitrided gate oxide in rapid thermal annealing (RTA), oxide breakdown characteristic has been improved significantly. This improvement has been attributed to the reduction of SiC–SiO2 interface-trap density and the generation of positive oxide charge, acting as an electron-trapping center. However, deleterious effects have been observed in non-nitrided oxide after subjected to the same RTA treatment. The differences in oxide-breakdown strength of these oxides have been explained and modeled.
Authors: Li Te Tsou, Sheng Hao Chen, Huai Yi Chen, Yao Jen Lee, Horng Show Koo, Chiung Hui Lai
Abstract: In this paper, we used the electron beam (e-beam) evaporation to deposit Ge thin film on glass, and used microwave annealing (MWA) system of 5.8 GHz frequency for thin film crystallization. Then, we compared the MWA experiment results of sample sheet resistance (Rs), crystallization strength and cross section with those using traditional rapid thermal annealing (RTA) equipment. We found that MWA can get poly-Ge thin film with (111), (220) and (311) crystallization directions and optimal Rs at a temperature of about 450 ° C without affecting the film thickness. By comparison, RTA equipment can only reduce the sample Rs at least temperature of 550oC.
Authors: Geun Ho Song, Wook Bahng, Nam Kyun Kim, Sang Cheol Kim, K.S. Seo, Eun Dong Kim
Authors: Chi Hua Hsieh, Li Te Tsou, Sheng Hao Chen, Huai Yi Chen, Yao Jen Lee, Chiung Hui Lai, Horng Show Koo
Abstract: In this study we use chemical and physical vapor depositions to fabricate amorphous silicon (a-Si) films. We also use traditional rapid thermal annealing (RTA) and advanced microwave annealing (MWA) to activate or crystallize a-Si films and then observe their sheet resistances and crystallization. We discovered, although the cost of films fabricated by electron beam (e-beam) evaporation is relatively lower than by chemical vapor deposition (CVD), the effects of the former method are poorer whether in sheet resistance or film crystallization. In addition, only at the doping layer prepared by CVD can film crystallization degree produced by MWA match RTA.
Authors: Rui Min Jin, Ding Zhen Li, Lan Li Chen, Xin Feng Guo, Jing Xiao Lu
Abstract: Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950°C for 5 min. The thin film made by RTA was smoothly and perfect structure.
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