Papers by Keyword: Recombination Centers

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Authors: C.M. Schnabel, M. Tabib-Azar, S.G. Bailey, Philip G. Neudeck, H.B. Su, Michael Dudley, R.P. Raffaelle
Authors: Kazuki Yoshihara, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima
Abstract: We have characterized deep levels in as-grown and electron irradiated p-type 4H-SiC epitaxial layers by the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated with electrons in order to introduce defects. As a result, we found that electron irradiation to p-type 4H-SiC created complex defects including carbon vacancy or interstitial. Moreover, we found that observed deep levels are different between before and after annealing, and thus annealing may change structures of defects.
Authors: A.R. Frederickson, P.J. Drevinsky
Authors: Corey J. Cochrane, Patrick M. Lenahan, Aivars J. Lelis
Abstract: We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.
Authors: Siegmund Greulich-Weber
Authors: Vladimir Skidanov
Abstract: The great enhancement of the minority carrier recombination rate after optical activation of FeB pairs was used for investigation of interstitial Fe ions diffusion in p-type Czochralsky silicon by Surface Photo-Voltage Technique (SPV). Highly reproducible profiles of the Fe ions distribution were obtained after one-time thermodonors annealing process (650 °C, 30 min.) with Fe film evaporated on one side of silicon slab and successive layer by layer silicon slab etching. Evolution of Fe concentration distribution between both sides of initially inhomogeneously contaminated silicon slab in durable annealing processes was investigated. Gradual Fe concentration reduction near preliminary contaminated slab surface and Fe concentration increase near opposite surface were observed. Fe concentrations near both surfaces become equal after approximately 10-times annealing in agreement with diffusion rate obtained by the first method. Chaotic release and hiding of latent Fe were observed after 5-7 hours of annealing process. Two-exponential increase of other than Fe recombination centers concentration was observed during 650 °C annealing. Both exponential factors are found to be functions of interstitial oxygen concentration in the silicon ingot.
Authors: Patrick M. Lenahan, N.T. Pfeiffenberger, T.G. Pribicko, Aivars J. Lelis
Abstract: In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.
Authors: J.C. Bourgoin, M. Zazoui, M.A. Zaidi
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