Papers by Keyword: Reverse Recovery

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Authors: Tian Peng Yang, Qi Shuang Ma
Abstract: The diode model for EMC is built on the basis of lumped charge model. The model consists of forward recovery, reverse recovery and carrier recombination and is completed by MAST modeling language in Saber. The simulation results show that this model describes the forward and reverse recovery correctly.
Authors: Brett A. Hull, Joseph J. Sumakeris, Mrinal K. Das, Jim Richmond, John W. Palmour
Abstract: The development of 4H-SiC PiN diodes capable of blocking to greater than 10 kV while having current ratings of 20 A at 100 A/cm2 is continuing in earnest. VF instability of these diodes continues to be a roadblock, but progress is being made, and a 20 A/10 kV 4H-SiC PiN diode wafer with an overall device yield of 40% has been fabricated. The latest device characteristics are discussed, along with details of approaches in improving the reverse recovery characteristics of these diodes to satisfy the requirements needed for implementation into high voltage inverter modules capable of switching at up to 20 kHz.
Authors: Martin Domeij, Bo Breitholtz, Jan Linnros, Mikael Östling
Authors: Zhen Yan Wang, Zhi Mei Chen, Jing Gang Zhang
Abstract: In buck converter, the reverse recovery failure may cause electrical spikes and deteriorate the circuit performance. In this paper, the snubber circuits for FRD in Buck converter are presented and the simulation and experimental study are investigated. RC snubber, saturated inductance snubber and RCD snubber are developed and simulated by PSpice to reduce the voltage spikes of FRD. The comparisons of the voltage spike show the advantages of the snubber circuit for the reverse recovery failure of FRD. In a Buck converter experimental system with RCD snubber circuits, the measured voltage show that the voltage spike of FRD can be suppressed effectively. Simulation and experimental results prove that the snubber circuits presented is easy to implement and can improve the buck converter performance
Authors: Martin Domeij, Uwe Zimmermann, D. Åberg, John Österman, Anders Hallén, Mikael Östling
Authors: Omid Mostaghimi, Nicolas G. Wright, Alton B. Horsfall
Abstract: In the aerospace industry where the weight and power density are important design parameters, high frequency operation results in smaller passive components. Furthermore, to achieve a large voltage conversion ratio, which is a goal for payload systems, the use of transformers increases the size and power losses of the system. To fulfill the space and weight requirements, a transformer-less SiC-based DC-DC multilevel converter providing high voltage conversion ratios without an extremely high duty cycle has been realized. The experimental high switching frequency and low current results for a conventional, 3-level and 4-level converter utilizing Si and SiC based COTS diodes are presented. SiC-based multilevel converters show a higher efficiency due to the low reverse recovery and fast switching of the diodes, which results in a higher voltage conversion ratio. This translates to a lower duty cycle to obtain the required output voltage, whilst eliminating the need for complex filtering even under light load conditions.
Authors: A. Hefner, Ty McNutt, D. Berning, R. Singh, A. Akuffo
Authors: Katsunori Asano, Atsushi Tanaka, Shuuji Ogata, Koji Nakayama, Yoichi Miyanagi
Abstract: The transient electrical characteristics of the forward recovery and reverse recovery characteristics of lifetime-controlled high blocking voltage 4H-SiC pin diodes by electron irradiation are investigated. Even at a heavy electron dose of 1×1014 cm-2, the forward voltage overshoot of a 4H-SiC pin diode is lower than that of a 2 kV/100 A class Si fast diode. As for the reverse recovery characteristics, small reverse recovery current and fast reverse recovery time are obtained by electron irradiation. The reduction ratio of recovery loss can therefore exceed the increase ratio of steady-state loss by electron irradiation.
Authors: Georgios Kampitsis, Eleni Gati, Stavros Papathanassiou, Stefanos N. Manias
Abstract: In this work, the use of SiC MOSFETs is proposed for the implementation of the H-bridge Voltage Source Inverter (VSI) of Inductive Power Transfer Systems (IPTSs) in order to successfully support potential capacitive loading. Conventional power semiconductor devices are prevented from feeding capacitive loads because of the occurrence of current overshoots and voltage spikes due to the reverse recovery phenomenon of the antiparallel diodes. Operation of the VSI under capacitive load can be caused in IPTSs during resonant frequency tracking or misalignment between the coupled coils, due to the existence of resonant circuits. Experiments conducted with both Si and SiC MOSFETs show the superiority of the latter in terms of system stability, endurance in high power and avoidance of catastrophic failure.
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