Papers by Keyword: RF Power

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Authors: Norhidayatul Hikmee Mahzan, Shaiful Bakhtiar Hashim, Sukreen Hana Herman, M. Rusop
Abstract: Nanocrystalline silicon (nc-Si) thin films were deposited on glass and polytetrafluoroethylene (PTFE, teflon) substrates using Radio frequency (RF) magnetron sputtering. The effect of RF power and deposition temperature on the physical and structural properties of nc-Si on the glass and Teflon substrate was studied. The thin films properties were examined by Raman spectroscopy and field emission scanning electron microscopy (FESEM). We found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results it showed that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and Teflon substrate.
Authors: C. Weitzel, L. Pond, K. Moore, M. Bhatnagar
Authors: N.A.M. Asib, Mohamed Zahidi Musa, Saifollah Abdullah, Mohamad Rusop
Abstract: Optimization of titanium dioxide (TiO2) nanostructures deposited on glass substrate by Radio Frequency (RF) magnetron sputtering has been studied. The aim of this paper is to determine which parameter of RF powers influence the optimization of TiO2 nanostructures. The surface morphology and topology, roughness properties and cross-sectional of TiO2 nanostructures were observed by Atomic Force Microscope (AFM). The particle size of TiO2 nanostructures were observed by Field Emission Scanning Electrons Microscope (FESEM) and the UV-vis transmission spectra were recorded using UV-vis spectroscopy. The lowest surface roughness has the smallest average TiO2 size particle with indirect optical band gap of 3.39 eV for optimum TiO2 nanostructures deposited at varies RF power.
Authors: N.D.M. Sin, Mohamad Hafiz Mamat, Mohamed Zahidi Musa, S. Ahmad, A. Abdul Aziz, Mohamad Rusop Mahmood
Abstract: The effect of RF power on the formation and morphology evolution of ZnO nanostructured thin films deposited by magnetron sputtering are presented. This project focused on electrical, optical and structural properties of ZnO thin films. The effect of variation of RF power at 50 watt-250 watt at 200 °C on glass substrate of the ZnO thin films was investigated. The thin films were examined for electrical properties and optical properties using two point probe current-voltage (I-V) measurement (Keithley 2400) and UV-Vis-NIR spectrophotometer (JASCO 670) respectively. The structural properties were characterized using field emission scanning electron microscope (FESEM) (JEOL JSM 7600F) and atomic force microscope (AFM) (Park System XE-100). The IV measurement indicated that at RF power 200 watt the conductivity of ZnO thin film show the highest. All films show high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). The root means square (rms) roughness for ZnO thin film were about 4 nm measured using AFM. The image form FESEM observed that transformation of structure size started to change as the RF power increase.
Authors: Mabrouk Selmi, F. Chaabouni, Mohamed Abaab, Bahri Rezig
Abstract: RF magnetron sputtering is used to deposit Aluminum-doped zinc oxide (ZnO:Al) films on glass and p-Si substrates. This work is a study of ZnO:Al films grown at different RF powers for photovoltaic cells application, as antireflective (AR) coatings. At room temperature and argon gas pressure of 0.6 Pa, RF power was changed from 200 to 400 W. The structural, electrical and optical properties of ZnO:Al films were investigated. Under theses conditions, we have obtained c axis-oriented wurtzite structure ZnO thin films with high transmission (>85%) and low reflection in visible wavelength range and a band gap of 3.34 eV. The results of this study suggest that the variation of the RF power, used for growth, allows the control of the structural and optical properties of the films. ZnO:Al films can be used in optical applications as thin films antireflective coatings.
Authors: Hong Yu Liang, Qing Nan Zhao, Feng Gao, Wen Hui Yuan, Yu Hong Dong
Abstract: With a mixture gas of N2 and Ar, silicon nitride thin films were deposited on glass substrates by different radio frequency (RF) magnetron sputtering power without intentional substrate heating. The chemical composition, phase structure, surface morphology, optical properties, refractive index, hydrophobic properties of the films were characterized by X-ray energy dispersive spectroscopy(EDS), X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), ultraviolet-visible spectroscopy(UV-Vis), nkd-system spectrophotometer and CA-XP150 contact angle analyzer, respectively. The results showed that silicon nitride thin films were amorphous and rich in Si; the transmittance reduced but refractive index and surface roughness increased; and the hydrophobic properties of SiNx became better with the increase of RF power.
Authors: Xiao Yun Teng, Wei Gao, Yan Hua Wu, Wei Yu
Abstract: Using helicon wave plasma assisted sputtering, ZnO films with strong c-axis orientation have been deposited on Al2O3 (0001) substrates. We have studied the effects of RF power on the crystallinity properties of ZnO films. It has been found that increasing RF power improves the in-plane crystalline quality as well as out-of-plane crystalline quality by using XRD. A high transparence in visible region and a sharp fundamental absorption edge at about 370 nm are obtained from the transmittance spectroscopy, which correspond to the less defects and better crystal structure of the film. But under higher RF power, the crystallinity of ZnO films is deteriorated. Meanwhile, the relationship between the RF power and the properties of ZnO films has been discussed.
Authors: N.A.M. Asib, A.N. Afaah, Aadila Aziz, Mohamad Rusop, Zuraida Khusaimi
Abstract: Nanocomposites of ZnO/TiO2 were fabricated by two methods. Firstly, deposition of TiO2 nanoparticles by Radio Frequency (RF) magnetron sputtering. Secondly, growths of ZnO nanostructures on the TiO2 nanoparticles by solution-immersion method with aqueous solution of Zinc nitrate hexahydrate as precursor solution and stabilizer hexamethylenetetramine (HMTA) in water as solvent. The optical properties of ZnO/TiO2 nanocomposites were examined by Ultraviolet-Visible (UV-Vis) spectroscopy, Raman spectroscopy and Photoluminescence (PL) spectroscopy. UV-vis spectra of ZnO/TiO2 nanocomposites display high absorption in the UV region and high transparency in the visible region. There is improvement in UV absorption for ZnO/TiO2 nanocomposites compared to pure TiO2 due to imperfect alignment of ZnO nanostructures. Raman analysis shows the presence of wurtzite hexagonal ZnO in all the films and presence of anatase structure of TiO2 in the film deposited at 200 W. PL spectra of the films show the emissions in the UV and visible regions. Intensity of PL emission in UV region (λ< 400 nm) is maximum for film deposited at 200 W and minimum for film deposited at 300 W resulting from the change in the surface state density. A broad peak from ~ 600-700 nm also was found for all the films.
Authors: Jing Jing He, Ming Zhi Wu, Yan Yan Wang, You Ming Yu, Xue Mei Wu, Lan Jian Zhuge
Abstract: ZnO:Al (AZO) films were prepared by radio frequency (RF) magnetron sputtering at various RF power (70-200W), the electrical and optical properties of AZO films were first investigated. The films deposited at 170W and 200W had the optimum opto-electrical property and then were surface textured by a post-deposition chemical etching with 0.5% HCl for 10-30s, all these films developed a craterlike surface morphology and the crater became larger and deeper as the etching time was increased. The light scattering property of AZO films was researched by calculated spectral haze. The AZO film deposited at 170W and etched 30s had the optimal light scattering property due to its most suitable craterlike surface morphology. Introduction
Authors: Chong Mu Lee, Choong Mo Kim, Sook Joo Kim, Yun Kyu Park
Abstract: ZnO thin films were deposited on sapphire (α-Al2O3) substrates by RF magnetron sputtering at substrate temperatures of 500, 600, 650 and 700°C for 3h at rf-powers ranging from 60 to 120 W. The FWHM of the XRD (0002) peak for the ZnO film was reduced down to 0.07° by optimizing the chamber pressure at a substrate temperature of 700°C. Sharp near-band-edge emission was observed in the photoluminescence (PL) spectrum for the ZnO film grown at room temperature. Excess RF power aggravates the crystallinity and the surface roughness of the ZnO thin film. Pole figure, AES and PL analysis results confirm us that RF magnetron sputtering offers ZnO films with a lower density of crystallographic defects. ZnO films with a high quality can be obtained by optimizing the substrate temperature, RF power, and pressure of the RF magnetron sputtering process.
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