Papers by Keyword: RF Sputtering

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Authors: L.Y. Low, Mat Johar Abdullah, N.H. Al-Hardan
Abstract: We report the deposition of aluminium doped zinc nitride film (Al-Zn3N2) on glass substrates by RF sputtering. Thermal oxidation of the film under different annealing temperature (500°C to 600°C) was carried out. Structural and electrical properties of the annealed films were investigated. XRD analysis showed that Al-Zn3N2 film was successfully converted into Al-N zinc oxide (ANZO) at 500°C. I-V characteristics of the films were measured and the lowest estimated resistivity of the films of 4kΩ.cm can be achieved at 600°C.
294
Authors: Satoru Iwamori
Abstract: Poly(tetrafluoroethylene)(PTFE) thin films were coated onto metal substrates by a spin coat apparatus, vacuum evaporator and RF sputtering, and their adhesion and friction properties evaluated. PTFE thin film coated onto nickel-titanium (Ni-Ti) substrate by spin coating showed a low friction coefficient, however pull strength between the thin film and Ni-Ti substrate was low. In order to increase the pull strength, PTFE and poly(vinyl alcohol) (PVA) composite thin films were introduced between the PTFE thin film and Ni-Ti substrate by spin coating. PTFE thin film was also coated onto SUS302 substrate by a vacuum evaporator. This PTFE thin film showed poor adhesion to the SUS302 substrate. The adhesion was enhanced by heating of the substrate during the evaporation. In addition, a PTFE and ethylene vinyl alcohol (EVOH) composite thin film showed higher adhesion strength than that of the PTFE thin film. Poly(fluorocarbon) thin films were prepared by a conventional RF sputtering with PTFE target. These thin films showed a higher friction coefficient than that of the pristine PTFE. Molecular structures of the poly(fluorocarbon) thin films prepared by RF sputtering were different from the pristine PTFE. This difference may have influenced the friction coefficient. The pull strength of metal thin films such as gold, copper, nickel and aluminum deposited on the sputtered PTFE thin films by vacuum evaporation was measured. The nickel thin film adhered to the PTFE thin film most strongly of all the thin films.
311
Authors: Edwin van der Wal, Arnoud W. Denier van der Gon, Siwart J. Oldenburg, Joop G.C. Wolke, John A. Jansen, Arjen M. Vredenberg
599
Authors: Pervez Akhtar, T.J. Ali, R. Mahmud
Abstract: The paper describes results of investigation on sputtered NiFe Films to determine the sputter deposition condition that could produce magnetic field sensors with the desired magnetic properties. The magnetic materials used in such devices should have a low coercive force, a low anisotropy field and a low magnetization dispersion, α50. .The results of systematic investigation of radio-frequency (RF) sputtered, RF biased, 82-18 % NiFe films showed (i) Improved Kobelev methods were applied to magneto-optic measurement techniques, suppress the magnetization ripples when subjected under the application of dc field. (ii) Anisotropy field results indicated an inverse trend with increasing substrate temperature (iii) the experimental measurements on magnetization dispersion relatively constant up to 200 °C with α50 approximately 1.2°, it then increases more sharply to about 3.5° at 400 °C substrate temperature. The work also provide understanding of the effects on the magnetic properties of sputtered magnetic films that is very limited as current literature is almost entirely limited to evaporated magnetic films.
109
Authors: E. Ech-chamikh, A. Essafti, M. Azizan, F. Debbagh, Y. Ijdiyaou
Abstract: Amorphous silicon on amorphous carbon (a-Si/a-C) multilayers was deposited by RadioFrequency (RF) sputtering. These multilayers were obtained by alternate deposition of a-C and a-Si layers, respectively from graphite and silicon targets of high purity, on crystalline silicon substrates. The RF power and the argon pressure, during the pulverization, were maintained respectively at 250W and 10-2 mbar. The annealing effects, at temperatures of 450°C and 750°C, on the deposited structures were investigated by X-ray reflectometry. The a-Si/a-C interfaces are abrupt before and after annealing at 450°C. The annealing at 750°C leads to a net decrease of both the upper a-Si layer thickness and the total multilayer thickness with a net enhancement of the interfaces reactivity. The upper silicon layer is crystallized after annealing at 750°C.
103
Authors: Fabrizio Quadrini, Denise Bellisario, Loredana Santo, Giovanni Matteo Tedde
Abstract: Silver nanocomposites are of great interest for several fields, ranging from packaging to biomedical applications, because of their known antibacterial properties. However, their use is strongly limited by technological issues: synthesis methods of silver nanoparticles are still difficult to control in terms of size, shape and aggregation. Moreover separation of nanoparticle aggregates should occur during part manufacturing by mixing with the polymer base but this process is also troublesome. In the present study, a new process to fabricate silver nanocomposites with antibacterial properties is presented. Silver nanofilms are deposited by radio frequency (RF) sputtering on polypropylene (PP) substrates. Consequently PP coated substrates are cut and inserted in a small-scale polymer mixer to produce the nanocomposite in a single step, without the need of producing nanoparticles. In fact, nanoparticles originate by the fragmentation of the nanocoating. Microscopic observations of nanocomposites revealed silver nanoclusters of different sizes. Their antibacterial activity has been verified in accordance to ISO 22196. The antibacterial activity of the nanocomposite was detected for the Escherichia coli and Staphylococcus aureus bacteria.
1540
Authors: Masami Aono, Shunsuke Kikuchi, Nobuaki Kitazawa, Yoshihisa Watanabe
Abstract: Amorphous carbon nitride (a-CNx) thin films were deposited by rf-reactive sputtering method using a graphite target, and after deposition the films were exposed to oxygen plasma. The effect of the oxygen plasma exposure on the morphology and chemical bonding states of the film surface has been studied. Film composition and the chemical bonding states were analyzed by X-ray photoelectron spectroscopy (XPS). Film surface was observed by atomic force microscopy (AFM). AFM observations have revealed that the as-deposited film surface is uniformly covered with particle-like features in the early stage of deposition and the surface changes to be covered with broccoli-like features with increasing the deposition time and correspondingly the surface roughness increases, while after exposure to oxygen plasma, the film surface was etched selectively and the surface roughness increases with the plasma exposure time. It should be noted that the etching behavior depends on the film deposition temperatures. XPS studies have shown that after exposure to oxygen plasma the change in the bonding states in the films prepared at 853 K is different from that in the films prepared at RT.
818
Authors: S.G. Kim, Seung Boo Jung, Ji Hun Oh, H.J. Kim, Yong Hyeon Shin
Abstract: Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films.
977
Authors: Chi Shiuan Yen, Huai Yi Chen, Horng Show Koo, Chiung Hui Lai
Abstract: In this paper, we used RF sputter to deposit the ZnO seed layer of 0.6 μm in thickness, which was then immersed in zinc nitrate hexahydrate [Zn(NO3)2•6H2O] and hexamethylenetetramine (C6H12N4) mixture solution of different concentrations for the growth of ZnO nanorods by hydrothermal method. After annealing at different temperatures, thermal field emission scanning electron microscope (TFSEM) was used to observe the arrangement and growth of ZnO nanorods. We found the concentration of the mixture solution of C6H12N4 and Zn(NO3)2•6H2O would affect the thickness and crystallization of ZnO nanorods, and the annealing temperature would change their columnar arrangement structure. The arrangement structure of the ZnO nanorods grown in the mixture solution of 0.2M concentration had more gaps and pores. Under this condition, we successfully fabricated a dye-sensitized solar cell (DSSC), of which the performance could be further improved by using ZnO nanorods prepared by many different methods.
381
Authors: Pervez Akhtar, Riaz Mahmud
Abstract: 82% Ni-Fe films have been prepared using Radio frequency (R.F) sputtered, R.F induced substrate bias. The results presented are of study of sputter films deposition at various RF substrate bias conditions so that suitable sputtering rate with optimum (target) composition could be determined for magnetoresistive sensing applications. Films have been sputtered with substrate temperature of 200° C, sputter gas (argon) pressure of 10mTorr with film thicknesses near 1000 °A. Substrate bias potential in the range 0 V to -400 V is varied in order to determine its dependence upon film composition and deposition rate. The result presented indicates the strong bias dependence upon film composition and deposition rate with most useful films for the application in concern could be produced at substrate bias potential in the range of -80 V to -120 V.
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