Papers by Keyword: Secondary Ion Mass Spectroscopy (SIMS)

Paper TitlePage

Authors: E. Wolf, U. Geissler, D. Klinger, A. Voigt
Authors: Howard E. Smith, Bang Hung Tsao, James D. Scofield
Abstract: The accuracy of Secondary Ion Mass Spectrometry (SIMS) depth profiles of aluminum (Al) dopant in silicon carbide (SiC) has been investigated. The Al SIMS profile differs in shape depending on whether it was obtained using a cesium (Cs+) or oxygen (O2 +) primary ion beam, and depends in the former case on which secondary ion is followed. The matrix signals indicate that the CsAl+ secondary ion yield changes during the Cs+ depth profile, probably because of the work function lowering due to the previously-implanted Al. These same matrix ion signals are used for a depth-dependent empirical correction to increase the accuracy of the Al concentration profile. The physics of these phenomena and the accuracy of the correction are discussed.
Authors: S. Kawaguchi, M. Kudo, Masaki Tanemura, Lei Miao, Sakae Tanemura, Y. Gotoh, M. Liao, S. Shinkai
Abstract: A compact angle-resolved secondary ion mass spectrometer (AR-SIMS) with a special geometrical configuration, composing of a differentially pumped micro-beam ion-gun, a tiltable sample stage and a time-of-flight (TOF) mass spectrometer was applied to measure angular distribution (AD) of secondary ions ejected from VN by oblique 3 keV Ar+ sputtering at room temperature. AD of V+ was almost identical with that of N+, strongly suggesting that Gibbsian segregation did not take place during sputtering. Since the angular dependence of VN+/V+ and V2 +/V+ intensity ratios was independent of that of N+ and V+ intensities, VN+ and V2 + dimer ions were generated via the “as such” direct emission process.
Authors: Wei Yuan Yu, You Liang Wang, Wen Jiang Lu
Abstract: Secondary ion mass spectroscopy (SIMS) has been adopted to study the diffusion of Al and Si in Cu44.25Ag14.75Zr36Ti5 bulk metallic glass (BMG). It has been found that around the transition temperature of metallic glass, the relation between its diffusion coefficient and the temperature satisfy the same Arrhenius relation, which means the metallic transition has not caused change to the diffusion mechanism. In addition, the radius of Al atom is close to that of Si atom, but under the same temperature and time condition, the diffusion coefficient of Si atom in bulk metallic glass (BMG) is twice that of the Al atom, while there is not a big difference in diffusion activation energy. This is because as non-metallic element, the radius of Si atom has a strong binding force with the metal atoms in the base material, which also has a bigger diffusion coefficient.
Authors: Kentaro Morito, Toshimasa Suzuki, Youichi Mizuno, Isao Sakaguchi, Naoki Ohashi, Kenji Matsumoto, Hajime Haneda
Abstract: The behavior of hydrogen in (Ba,Sr)TiO3 (BST) thin film capacitors under electric fields was investigated by performing secondary ion mass spectroscopy (SIMS) analyses. It was clearly observed that the ingress of atmospheric hydrogen into BST thin film capacitors occurred through the anode and that it diffused toward the cathode under electric fields. In addition, it was found that the deterioration of the I-V properties of the BST thin film capacitors can be interpreted in terms of the distribution of hydrogen concentration in the BST thin films.
Authors: N. Balandina, Boris S. Bokstein, A. Ostrovsky
Authors: Haruki Ryoken, Isao Sakaguchi, Naoki Ohashi, Yutaka Adachi, Takeshi Ohgaki, Shunichi Hishita, Hajime Haneda
Abstract: The defect structure of undoped ZnO and (Zn1-x,Mgx)O solid-solution films were deposited on YSZ substrate with pulsed laser deposition (PLD) to investigate defect equilibria in those films. In particular, the effects of thermal treatment on the structures and prosperities of (Zn1-x,Mgx)O solid-solution films were examined. The films with high MgO concentration (x>0.12) decomposed to the wurtzite-type and rock-salt-type phase after thermal treatment, indicating that the solubility limit of Mg was about x=0.12 and the wurtzite-type (Zn,Mg)O films with x>0.12 were indicated to be non-equilibrium ones. The subsequent analyses of oxygen diffusivity in those films revealed that the films under non-equilibrium state, i.e., wurtzite-type (Zn1-x,Mgx)O with x>0.12, contained significantly high concentration of anion defects.
Authors: Hideo Nakajima, Y. Nosé, N. Terashita, Teruyuki Ikeda, Hiroshi Numakura
Abstract: The diffusion coefficient of In in TiAl has been measured using ion implantation technique and secondary ion mass spectrometry. The diffusion coefficients of Fe and Pd in FePt have been measured at two compositions by radioactive tracer method. In order to clarify diffusion anisotropy, single crystal of each alloy was used. The In diffusion perpendicular to the [001] axis is faster than that parallel to the [001] axis. Such trend is similar to Ti diffusion previously measured in our group. The diffusion of Fe in FePt perpendicular to the [001] axis is faster than that parallel to the [001] axis at each composition, while the anisotropy of the Pd diffusion is different with composition. The predominant process of the diffusion in perpendicular to the [001] has been discussed on the basis of the expressions of the diffusion coefficients.
Authors: Sandrine Juillaguet, Marcin Zielinski, Carole Balloud, C. Sartel, C. Consejo, Bernard Boyer, Véronique Soulière, Jean Camassel, Yves Monteil
Showing 1 to 10 of 39 Paper Titles