Papers by Keyword: Semi-insulating (SI)

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Authors: Thomas Anderson, Donovan L. Barrett, J. Chen, W.T. Elkington, Ejiro Emorhokpor, A. Gupta, C.J. Johnson, R.H. Hopkins, Charles Martin, Thomas Kerr, E. Semenas, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback
Authors: Stefan Mueller, Rudolf Stibal, Wolfgang Jantz
Abstract: Contactless topographic resistivity mapping is used to characterize SiC and Cd(Zn)Te wafer material. For locally inhomogeneous material, detailed analysis of the deformed charge transients allows the evaluation of the partial resistivity contributions.
Authors: Sashi Kumar Chanda, Yaroslav Koshka, Murugesu Yoganathan
Abstract: A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.
Authors: Patrick Carlsson, Nguyen Tien Son, T. Umeda, Junichi Isoya, Erik Janzén
Abstract: The SI-5 electron-paramagnetic-resonance (EPR) centre is a dominant defect in some high-purity semi-insulating (HPSI) SiC substrates and has recently been shown to originate from the negatively charged carbon vacancy-carbon antisite pair (VC − Si C ). In this work, photoexcitation EPR (photo-EPR) was used for determination of the energy position of deep acceptor levels of VCCSi in 4H-SiC. Our photo-EPR measurements in slightly n-type material show an increase of the EPR signal of VC − Si C for photon energies from ~0.8 eV to ~1.3 eV. Combining the data from EPR, deep level transient spectroscopy and supercell calculations we suggest that the (1–|2–) levels of the different configurations of the defect are located in the range ~0.8-1.1 eV below the conduction band.
Authors: Nguyen Tien Son, Patrick Carlsson, Andreas Gällström, Björn Magnusson, Erik Janzén
Abstract: Semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range 5.5×1015 –1.1×1017 cm–3 were studied by electron paramagnetic resonance. We show that only in heavily V-doped 4H-SiC vanadium is responsible for the SI behavior, whereas in moderate V-doped substrates with the V concentration comparable or slightly higher than that of the shallow N donor or B acceptor, the SI properties are thermally unstable and determined by intrinsic defects. The results show that the commonly observed thermal activation energy Ea~1.1 eV in V-doped 4H-SiC, which was previously assigned to the single acceptor V4+/3+ level, may be related to deep levels of the carbon vacancy. Carrier compensation processes involving deep levels of V and intrinsic defects are discussed and possible thermal activation energies are suggested.
Authors: Nguyen Tien Son, Björn Magnusson, Z. Zolnai, Alexsandre Ellison, Erik Janzén
Authors: B.K. Jones, J.M. Santana, T. Sloan
Authors: Nguyen Tien Son, Björn Magnusson, Z. Zolnai, Alexsandre Ellison, Erik Janzén
Authors: R. Fornari, M. Moriglioni, M. Thirumavalavan, A. Zappettini, M. Curti, G. Mignoni, M. Locci
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