Papers by Keyword: Si Additions

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Authors: Brian M. Gable, Gary J. Shiflet, E.A. Jr. Starke
Authors: Yohei Satoi, Hideki Hirai, Hiroyuki Yoshino, Shinzo Yoshikado
Authors: Kwan Mo Kim, Soo Hyung Seo, Jae Woo Kim, Joon Suk Song, Myung Hwan Oh, Wook Bahng, Eun Dong Kim
Abstract: The variation of nitrogen doping concentration was systematically investigated with respect to the amount of silicon powder added to the SiC powder for growing n-type 6H-SiC single crystal by the sublimation method. To change intentionally the Si content in the SiC powder, 0wt% to 2wt% of a silicon powder was added to first-thermal treated SiC powder and the mixed powder was treated again at 1800oC for 3 hours to eliminate excess free-metallic silicon. Nitrogen doped 6H-SiC single crystals were grown by using 2nd-thermal treatment SiC powder at fixed N2/(Ar + N2) (3%). The nitrogen doping concentration of 6H-SiC crystals increased with increasing Si content in the SiC powder. In this work, we could identify that the additional silicon powder in SiC powder plays a role in the enhancement of nitrogen doping in 6H-SiC crystals grown by the sublimation method.
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