Papers by Keyword: SiC JBS Diodes

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Authors: Yong Hong Tao, Song Bai, Run Hua Huang, Gang Chen, Ling Wang, Ao Liu, Yun Li, Zhi Fei Zhao
Abstract: 3.3kV and 4.5kV 4H-SiC junction barrier Schottky (JBS) diodes with floating guard rings edge termination have been fabricated. The 3.3kV device with 33μm 2.7E15 cm-3 epilayer and 5.5Х5.5mm2 schottky contact area has a blocking voltage (Vb ) of 3.9 kV and a specificon-resistance (Ron) of 10.5 mΩ.cm2, with a forward current measured up to 50A at VF=3.0V. The 4.5kV device with 50 um 1.2E15 cm-3 epilayer and 5.5Х5.5mm2 schottky contact area has a blocking voltage (Vb ) of 5.1 kV and a specificon-resistance (Ron) of 22.9 mΩ.cm2, with a forward current of 30A at VF=3.7V.
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Authors: Andrei Mihaila, Renato Amaral Minamisawa, Lars Knoll, Vinoth Kumar Sundaramoorthy, Enea Bianda, Holger Bartolf, Giovanni Alfieri, Munaf Rahimo
Abstract: This paper presents an investigation regarding the influence of the active area design on the static and dynamic performance of SiC JBS diodes. The analysis has been performed on fabricated JBS diodes, rated for 1.7kV applications. For the active area layout, both stripe and hexagonal cell patterns have been used for the implanted p+ regions.
471
Authors: Oleg Korolkov, Raul Land, Jana Toompuu, Natalja Sleptsuk, Toomas Rang
Abstract: In the present work, the prototype of a voltage multiplier represented as the diffusion-welded stack is presented. Two options of multiplier prototypes are considered: the scheme with external capacitors and the multiplier of the vertical composition using the diode's own capacitance. Oscillograms of input and output signals for both multiplier composition are presented.
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