Papers by Keyword: SICGT

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Authors: Yoshitaka Sugawara
Abstract: To achieve large current capability in spite of present small SiC devices that are limited by various crystal defects, focus was placed on SiC GTO thyristor and SICGT have been developed as an advanced SiC GTO. SICGTs with current capability of 1.6-100 A and blocking voltage of 3-12.7 kV and a 3 phase PWM SICGT inverter with output power of 35 kVA have been successfully developed. Furthermore, application of the SiC inverter aimed to a load leveling system was demonstrated.
Authors: Katsunori Asano, Koji Nakayama, Yoichi Miyanagi, Atsushi Tanaka, Masahiko Nishimura, Toru Izumi, Shuuji Ogata, Toshihiko Hayashi
Abstract: The measured turn-off waveforms of 4.5 kV SiCGTs by using electron irradiation with various electron doses are reported. The turn-off time decreased with an increase in the electron dose. Furthermore, the turn-off characteristics of SiCGTs with p-type drift layer, which assumed the various trap concentrations, are simulated. The relation between the turn-off characteristics and the trap is also investigated. The simulated results show good correlation to measured data and the simulated turn-off times decrease with an increase in the electron dose as well as measured data.
Authors: Koji Nakayama, Ryosuke Ishii, Katsunori Asano, Tetsuya Miyazawa, Hidekazu Tsuchida
Abstract: Zener voltages of the fabricated SiC Zener diodes with various nitrogen concentrations in the range from 7×1017 to 5×1019 cm-3 are 17 to 87 V, and decreased with an increase in the nitrogen concentration. Furthermore, in a chopper circuit using SiC Zener diodes for SiCGT gate protection, the commutated current decreases slowly even though cathode current falls rapidly, and the SiCGT gate is protected from surge voltage by SiC Zener diode. Moreover, the value of Zener voltage after the operation was the same as that before half bridge operation at 47 V.
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