Papers by Keyword: Silicon Dioxide

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Authors: M. Odalović, D. Petković
Abstract: The gamma-ray irradiation causes positive charge traps formation in silicon dioxide films and at silicon dioxide - silicon interface of MOS devices, and the threshold voltage shift in MOS transistors. Here, the Monte Carlo model was used to develop an approach for estimating gammaray induced traps spatially distributed in silicon dioxide films. This is combined with the model of energy distributed traps at silicon dioxide - silicon interface. The developed model enables gammaray induced charge and threshold voltage shift determination as a function of gamma-ray doses. The threshold voltage measurements at a single specified current, both of radiation sensitive and radiation hardened MOS transistors irradiated with different doses of gamma-ray are compared with the developed model and good agreement are obtained.
Authors: Larry W. Shive, Claire Frey, Carissima Vitus
Authors: H.Ö. Ólafsson, Einar Ö. Sveinbjörnsson, T.E. Rudenko, V.I. Kilchytska, I.P. Tyagulski, I.N. Osiyuk
Authors: Mao Sheng Cao, Hai Bo Jin, Jin Gang Li, Liang Zhang, Qiang Xu, Xiang Li, Lan Tian Xiong
Abstract: SiO2/ SiO2 nanocomposites dipped with silicon resin was ablated and the physical state and phase transformation were characterized. Trace impurity in raw material and compound obtained by chemical reaction were analyzed. Moreover, the high-temperature dielectric properties were investigated. On the basis of above, it is found that the impurity carbon and silicon carbide are the key factors influencing dielectric properties.
Authors: Ji Jun Fan, Nan Hui Yu
Abstract: The sound attenuation in ER fluid was experimentally studied. The results show that sound attenuation of ER fluid could be adjusted by the particle concentration of ER fluid and the intensity of electric field. Amplitude of sound wave in ER fluid increases with the increasing of particle concentration and field intensity; on the other hand, the attenuation of sound wave decreases with the increasing of propagation distance, as well as the particle concentration and field intensity. The experimental results indicate that the solidification effect of ER fluid is beneficial to the propagation of sound wave.
Authors: Won Jun Lee, Min Ho Chun, Kwang Su Cheong, Kwang Chol Park, Chong Ook Park, Guo Zhong Cao, Sa Kyun Rha
Abstract: SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical and electrical properties were characterized for being applied as a gate insulator of low-temperature polysilicon thin-film transistors. ALD SiO2 films were deposited at 350–400 oC using alternating exposures of SiH2Cl2 and O3/O2, and the characteristics of the deposited films were improved with increasing deposition temperature. The ALD films deposited at 400 oC exhibited integrity, surface roughness and leakage current better than those of the conventional plasma-enhanced chemical vapor deposition (PECVD) films.
Authors: Kevin Matocha, Jesse B. Tucker, Ed Kaminsky
Abstract: Different SiC thermal oxide passivation techniques were characterized using UV-induced hysteresis to estimate the fixed charge, Qf, and interface-trapped charge, Qit. Steam-grown oxides have a fixed charge density of Qf=-1x1012 cm-2, and a net interface-trapped charge density of Qit=4x1011cm-2. Addition of a thin low-pressure chemical-vapor deposited (LPCVD) silicon nitride layer decreased these parameters to Qf=-2x1011 cm-2 and Qit=4x1010 cm-2. Dry oxide shows a fixed charge density, Qf=-3x1012 cm-2 and interface-trapped charge density, Qit=4x1011 cm-2 which changes to Qf=+7x1010 cm-2 and Qit=1x1010 cm-2 with the addition of a LPCVD silicon nitride cap. Dry thermal oxide with a silicon nitride cap was used to passivate SiC MESFETs to achieve a power-added efficiency of 60% in pulsed operation at 3 GHz in Class AB bias conditions.
Authors: Carl Mikael Zetterling, Mikael Östling, Chris I. Harris, Nils Nordell, K. Wongchotigul, Michael G. Spencer
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