Papers by Keyword: SIMS

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Authors: P. Fielitz, Günter Borchardt, S. Ganschow, R. Bertram
Abstract: Simultaneous 18O and 26Al tracer diffusion experiments were performed in nominally undoped single crystalline α-Al2O3. The results clearly show that the bulk diffusivity of aluminium is much higher than the bulk diffusivity of oxygen in nominally undoped alumina. Comparing the 26Al tracer diffusivities of Ti doped (300-400 wt. ppm Ti) and nominally undoped single crystalline α-Al2O3 one finds that the aluminium bulk diffusivity is insensitive to the Ti doping.
Authors: Jody Fronheiser, Kevin Matocha, Vinayak Tilak, Leonard C. Feldman
Abstract: The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3x1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5x1014 cm-2 carbon build up at or near the interface.
Authors: Joakim Eriksson, Niklas Rorsman, Herbert Zirath, Rolf Jonsson, Qamar-ul Wahab, Staffan Rudner
Authors: Margareta K. Linnarsson, J. Isberg, Adolf Schöner, Anders Hallén
Abstract: The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.
Authors: Howard E. Smith, Bang Hung Tsao, James D. Scofield
Abstract: The accuracy of Secondary Ion Mass Spectrometry (SIMS) depth profiles of aluminum (Al) dopant in silicon carbide (SiC) has been investigated. The Al SIMS profile differs in shape depending on whether it was obtained using a cesium (Cs+) or oxygen (O2 +) primary ion beam, and depends in the former case on which secondary ion is followed. The matrix signals indicate that the CsAl+ secondary ion yield changes during the Cs+ depth profile, probably because of the work function lowering due to the previously-implanted Al. These same matrix ion signals are used for a depth-dependent empirical correction to increase the accuracy of the Al concentration profile. The physics of these phenomena and the accuracy of the correction are discussed.
Authors: Margareta K. Linnarsson, Sethu Saveda Suvanam, Lasse Vines, Anders Hallén
Abstract: Relocation of alkali metals sodium, potassium and cesium during oxidation of 4H-SiC has been studied by secondary ion mass spectrometry. The alkali metal source has been introduced by ion implantation before oxidation into n-and p-type 4H-SiC samples. Dry oxidation of SiC has been performed at 1150 oC during 4, 8 and 16 h. In the formed oxide, the main part of the alkali metals diffuses out via the SiO2 surface. Close to the moving SiO2/SiC interface, a minor amount of alkali metals is retained. In the SiC material, the main amount of implanted alkali atoms is not redistributed during the oxidation, although a minor amount diffuses deeper into the samples. For p-type 4H-SiC, the diffusion deeper into the samples of the studied alkali metals decreases as the mass increases, Na+<K+<Cs+, but the sodium mobility is substantial already at 1150 °C.
Authors: Stanislav I. Soloviev, Ying Gao, Yuri I. Khlebnikov, I.I. Khlebnikov, Tangali S. Sudarshan
Authors: Narcis Mestres, M. Ben El Mekki, F.J. Campos, Jordi Pascual, Erwan Morvan, Phillippe Godignon, José Millan, Giorgio Lulli
Authors: M.U. Ahmed, E.D. Jones, J.B. Mullin, N.M. Stewart
Authors: T. Henkel, Yasuhito Tanaka, Naoto Kobayashi, Shin Ichi Nishizawa, Shunichi Hishita
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