Papers by Keyword: SiO2

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Authors: Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke, P. Ordejón
535
Authors: Chien-Hung Wu, Juyong Chung, Moon Hi Hong, Christian A. Zorman, P. Pirouz, Mehran Mehregany
171
Authors: Ying Li, Gao Yang Zhao, Xiao Fei Zhou, Li Ning Pan, Yang Ren
Abstract: Amorphous SiO2 thin films were fabricated at different temperatures using sol-gel technique. The unipolar resistive switching behavior was observed in Cu/ SiO2/ ATO (SnO2: Sb) sandwiched structure when the SiO2 thin film annealed at 500°C. The average ratio of Roff /Ron is 102. We investigated the successful device using HRTEM and XPS. It shows that the Cu defuses into the SiO2 thin film and it forms CuSiO3 in the interface between SiO2 and ATO films according to the high resolution images.
1
Authors: Patrick Fiorenza, Alessia Frazzetto, Lukas K. Swanson, Filippo Giannazzo, Fabrizio Roccaforte
Abstract: In this work the field effect mobility measured on lateral n-channel MOSFETs in 4H-SiC with Al implanted body was correlated with the interface trap density measured on MOS capacitors. The test devices were fabricated on samples subjected to different post implantation annealing conditions (i.e. with or without a protective carbon capping layer) and to an identical post-oxidation annealing in N2O. Despite the improved interfacial morphology, a reduction of the peak mobility (from 40 to 24 cm2V-1s-1) was observed using the carbon capping layer. An increase in the density of interface traps was consistently found. Nanoscale measurements of the active dopant concentration in the SiC channel region by cross-sectional scanning capacitance microscopy showed an higher compensation of p-type SiC for the sample processed without the capping layer, which indicates a more efficient incorporation of nitrogen at the SiO2/SiC interface.
699
Authors: Wen Rui Zheng, Min Zhang, Jing Li Xu, Tao Huang
Abstract: We present a novel method to synthesize mesoporous nickel siliceous coated on CNTs with larger hole based on the mesoporous silica coated on CNTs, the pore size of mesoporous silica coated on CNTs was enlarged to 7.8 nm from 2.72 nm. Compared to others’ work, our method is low cost, simple and high efficiency. And more importantly, this method shows great potential in applying other type of mesoporous materials such as SBA-15 etc.
1906
Authors: S. Zouai, F.Z. Mezahi, S. Achour, Abdelhamid Harabi
Abstract: Diopside CaMgSi2O6 is an attractive material because of its multi applications. It was prepared by sintering the mixture at different temperatures (900°C-1300°C). Starting materials were pure SiO2 and dolomite raw materials. In order to improve the properties of sintered samples, such as the density egg white (ovalbemin) has been added into diopside. Furthermore, the effect of P2O5 addition on the sintering of the prepared diopside in the range of 0.5 to 5.0 wt% was studied as a function of the sintering temperature. A density of 96.5% of theoretical has been achieved when 5.0 wt% P2O5 was added, at a sintering temperature of 1225°C, whereas the density of diopside samples, without P2O5 addition was lower than 83.0% of theoretical.
235
Authors: Yuichi Nagahisa, Yoshisige Tsuchiya, Eisuke Tokumitsu
Abstract: Effects of residual oxygen in an annealing chamber on graphitization of SiC along with surface pre-treatment process have been investigated. As a pre-treatment process, SiO2 was formed on 4H-SiC(0001) substrates by thermal oxidation before graphene formation annealing. Epitaxial graphenes were formed in several O2 pressures and effects on graphitization of SiC were evaluated. It is shown that quality of graphene on SiC substrates which formed without pre-oxidation degraded by the presence of residual O2 in the chamber. It is demonstrated that SiO2 pre-oxidation films (about 10nm) were effective to prevent such degradations, for all O2 pressures that we examined in this work. In addition, at O2 pressure of 1.1x10-1Pa, with SiO2 pre-oxidation, a graphene growth rate was increased, which indicates that a certain level of O2 pressure enhances graphene growth.
949
Authors: Grit Hüttl, Dirk Beyer, Eberhard Müller
726
Authors: G. Duscher, H. Müllejans, Jens Werner, M. Rühle
713
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