Papers by Keyword: Sn-Doped

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Authors: Azhan Hashim, Shaari Abdul Halim, A. Nazree, Azman Kasim, S.A. Senawi
Abstract: Measurements of complex AC susceptibility χ = χ + χ as a function of temperature have been carried out on Sn-doped Bi1.6Pb0.4Sr2(Ca1-xSnx)2Cu3Oδ superconductor samples prepared via the conventional solid state reaction method. All the samples exhibit perfect diamagnetism below 109 K. The χ (T) curves display two-step features, indicating the presence of mixed phases and therefore weakening of the grains' coupling. The amount of shielded volume in Sn-free samples is greater than that in Sn-doped samples. The intrinsic peak due to the small AC losses within the grain was not observed in the χ (T) curves for all samples. However, the coupling peak, TP, for Sn-free samples at an applied field of 1.0 Oe was observed at 89 K and shifted to a lower temperature ranging from 59 K to 64.2 K in Sn-doped samples. The amounts of hysteresis losses above the TP in all doped samples were smaller than that of the Sn-free sample. Therefore, the effect of Sn doping suppressed the inter-granular critical current, Jcm, and the presence of weak links that coupled the superconducting grains.Keywords: BSCCO, AC Losses, Sn-doped, Superconductor
Authors: Abdullah Huda, M.N. Norazia, S. Shaari, A.Amir Khadum
Abstract: The sol-gel method was used to obtain ZnO films doped with Sn at different annealing temperatures, 400°C, 500°C and 600°C. As a starting material, zinc acetate dehydrate was used, with 2-methoxyethanol and monoethanolamine as the solvent and stabilizer, respectively. The dopant source was tin chloride. The amounts of dopant in solution were Zn1-xSnxO: x = 0 and 5at.%. The proportion of dopant and Zn atoms are not the same in the film and in the solution. In other cases, the dopant proportion in the film is less than that in the solution. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX), UV-VIS spectroscopy and Raman spectroscopy were used to study the structural, surface morphological and optical properties of the films and the molecular bonding of the ZnO, respectively. It was concluded that the dopant amount, as well as the annealing temperature, modifies the film growth process and consequently the microstructure and surface morphology as well as the optical properties.
Authors: Aiwu Li, Hua Xing, Cuiling Zhou, Jian Shen, Letian Zhang, Wei Zheng, Yushu Zhang
Abstract: Sn-doped SiO2 thin films were fabricated on Si substrates by the Sol-Gel method. Permanent refractive index change was found using ultraviolet (UV) laser radiation at 248 nm. The photoinduced refractive index change increased after radiation and variety in the contents of Tin. The optical and surface properties of the films were characterized using X-ray photoelectron spectroscopy (XPS) and variable angle spectroscopic ellipsometry (VASE).
Authors: Xi Chen, Yu Ping Tong
Abstract: Pure lead titanate (PbTiO3) and Sn doped PbTiO3 solid solution were prepared by sol-gel technique. The sol was prepared by mixing stable solutions of Pb-citrate, Sn-and Ti (OC4H9)4 precursors. The structure and particle size and morphology of PbTiO3 powder were characterized by XRD, and the results shows that the precursors decomposed and forms pure phase after heating at 973 K and 1073 K for 2 h. Influence of different factors on PbTiO3 gel doped with Sn was discussed. It is found that higher synthesis temperature is needed to prepare Sn doped PbTiO3 solid solutions.
Authors: Ahmad Syakirin Ismail, Mohd Firdaus Malek, Muhammad Amir Ridhwan Abdullah, Mohamad Hafiz Mamat, M. Rusop
Abstract: High sensitivity Tin (IV) (Sn) - doped zinc oxide (ZnO) humidity sensor was deposited using sol-gel immersion method. The Sn-doped sample was deposited on glass substrate and undoped sample was also prepared to seem the improvement made through doping process. The analyses showed that the sensor’s morphology has become more porous and having lower average diameter of nanorods, high conductivity and higher response, recovery time, and sensitivity. The sensitivity of the sensor increased from 2 to 4 by doping with Sn.
Authors: D.K. Maude, U. Willke, M.L. Fille, Pierre Gibart, Jean Claude Portal
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