Papers by Keyword: Spin Precession

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Authors: Tetsu Ito, Wataru Shichi, Masao Ichida, Hideki Gotoh, Hidehiko Kamada, Hiroaki Ando
Abstract: Electron spin-spin interaction in asymmetric coupled GaAs/AlGaAs quantum well (QW) is investigated through electron spin precession measurements. In the experiment, the precession (Larmor) frequency of electrons localized in thin and thick QWs are measured by means of polarization- and time-resolved photoluminescence measurements under magnetic field. The Larmor frequency observed in thin well was transformed to that of thick well with increasing excitation power density. This dependence can be reproduced by theoretical calculations, which take into account electron spin-spin interactions in GaAs wells.
Authors: J. Yang, M. Chiba, R. Hamatsu, Masataka Hirose, T. Hirose, H. Iijima, M. Irako, T. Kumita, N.C. Mazumdar, H. Nakabushi, M. Washio
Authors: Yi Lin Mi, Xiao Qing Zhao, Lan Wang
Abstract: A theoretical model to study Hanle effect for materials with weak spin-orbit coupling is developed. It considers the contributions from not only the drift current but also the diffusion part, which pronouncedly enlarges the application scope of the model. The spin lifetime in spin drift diffusion equation is also corrected by considering the thermal effect and the influence of external electrical field.
Authors: Yi Lin Mi, Xiao Yun Tie
Abstract: Spin dephasing in organic semiconductor was studied based on spin drift-diffusion model in various electric field. It is found that in the ohmic regime, spin dephasing is determined by the voltage bias. With increase of the voltage bias, spin coherence increases. And the increasing voltage bias can enhance the magnitude of the spin dephasing oscillations at a static perpendicular maganetic field. It shows that the current density in total device output can be modulated by an electrostatic field via controlled precession.
Authors: A.W. Hunt, L.V. Hau, J.A. Golovchenko
Authors: Jun Qing Zhao, Tian You Zhang, Zhen Feng Jia, Meng Ding, Ning Yu Zhang, Feng Xiang Wang, Yan Ju Ji, Yan Tao Pang, Ying Chen, Gang Fu
Abstract: We investigate the effect of hyperfine interaction on magnetoresistance in nonmagenetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from hyperfine interaction-dependent spin precession picture. The magnetoresistance depends on initial spin orientation of electron to hole in electron-hole pairs. Increasing hyperfine interaction slows down change of the magnetoresistance with magnetic field. The field dependence, the sign and saturation value of the magnetoresistances are composite effects of recombination and dissociation rate constants of singlet and triplet electron-hole pairs.
Authors: Hui Xian Wang, Li Ben Li, Da Wei Kang
Abstract: We propose a four-terminal nano device made of quantum wires with Rashba spin-orbit (SO) coupling. In each terminal there are several independent channels formed with quantum wires. The coherent transmission of electrons in such a nano system is a combined effect of quantum interference and spin precession. When defining two opposite terminals as source and drain leads, the charge and spin currents in channels of other two terminals exhibit spatial distributions which reflect the competition between spin precession and quantum interference during the tunneling of electrons. Since the four-terminal nano device is geometrically simple for the moving paths of charge and spin, our investigation may shed some light on the basic physical picture on this issue.
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