Papers by Keyword: Sputter Deposition

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Authors: H.G. Yang, C. Wang, Yi Cui, Kai Gui Zhu, X.G. Diao, H.Y. Wang, Tian Min Wang
Abstract: An all-thin-film glass/ITO/MoO3/LiAlO2/NiOx/ITO device was deposited by magnetron sputtering for electrochromic application. The amorphous MoO3 and LiAlO2 thin films were prepared with the substrate temperature below 0 °C and in O2 and Ar gas pressure. The structure and surface morphology of the films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). It has been found that the amorphous LiAlO2 thin film was a suitable ion conductor for the electrochromic device. The transmittance in the wavelength range of 400-800 nm for the ITO/MoO3/LiAlO2/NiOx/ITO device changed from 14.48 % to 57.68 % by the applied voltage of 7 V. The blue-colored electrochromic property could be observed for the all-thin-film device. The experimental results indicated that such a monolithic system had great potential to be applied in flat-panel displays and smart windows.
Authors: Claes Goran Granqvist, E. Avendaño, A. Azens
Authors: Pia C. Lansåker, Klas Gunnarsson, Arne Roos, Gunnar A. Niklasson, Claes Goran Granqvist
Abstract: Thin films of Au were made by sputter deposition onto glass substrates with and without transparent and electrically conducting layers of SnO2:In. The Au films were up to ~11 nm in thickness and covered the range for thin film growth from discrete islands, via large scale coalescence and formation of a meandering conducting network, to the formation of a more or less “holey” film. Scanning electron microscopy and atomic force microscopy showed that the SnO2:In films were considerably rougher than the glass itself. This roughness influenced the Au film formation so that large scale coalescence set in at a somewhat larger thickness for films on SnO2:In than on glass. Measurements of spectral optical transmittance and electrical resistance could be reconciled with impeded Au film formation on the SnO2:In layer, leading to pronounced “plateaus” in the near infrared optical properties for Au films on SnO2:In and an accompanying change from such two-layer films having a lower resistance than the single gold film at thicknesses below large scale coalescence to the opposite behavior for larger film thicknesses.
Authors: Jérémie De Baerdemaeker, Charles Dauwe, Danny Segers, Christophe Detavernier, D. Deduytsche, W. Egger, Peter Sperr
Authors: Prakash N.K. Deenapanray, F. Danie Auret, G. Myburg, M. Hayes, W.E. Meyer, C. Schutte
Authors: Tsutomu Sonoda, Akira Watazu, Kazumi Kato, Tadashi Asahina
Abstract: The deposition of Sn-5wt.%Al alloy onto pure aluminum powder in its self-convective motion by magnetron DC sputtering was examined in order to prepare Al-Sn composite particles, aiming not only at the development of highly uniform sintered binary compact materials but also at the improvement of the bonding between the aluminum particles after sintering at low temperature such as 250°C. The self-convection phenomenon of the aluminum powder in the vacuum chamber occurred when a perpendicular vibration was applied to the powder. The sputter-deposition of the Sn-Al alloy was carried out during the self-convection of the aluminum powder. Under SEM and according to EPMA analysis, as well as according to thermal analysis with DSC, it was confirmed that the obtained particles were coated with the Sn-Al deposits. Therefore it was found that Sn-Al composite powder could be produced by this processing, and thereby not only the development of highly uniform sintered binary compact materials but also the improvement of the bonding between the aluminum particles after sintering at low temperature were expected.
Authors: Jeong Wan Kim, Yeong Min Park, Dae Wook Kim, Kelimu Tulugan, Tae Gyu Kim
Abstract: Color glasses are fabricated with Titanium target by RF magnetron sputtering. The physical properties of the Ti thin films are investigated according to preparation conditions, such as argon and oxygen gas flow ratio, RF power and Working pressure. The results indicate that it is possible to deposits various Ti thin film’s of different colors on glass substrate, such as yellow, orange, brown, purple. The thickness according to the color was analyzed using Veeco's Stylus profiler (model: dektak 6M).
Authors: Shi Qiang Qian, Jian Sheng Wu
Abstract: Amorphous thin Films of Ti51.78 Ni22.24Pd25.98 alloys were deposited onto 2 inch diameter n-type (100)Si wafer by r.f. magnetron sputtering. The crystallization temperature from an amorphous state to crystallization of free-standing thin film was found to be 553.1oC, but that of non-free-standing thin film on Si wafer was found to be higher from X-ray diffraction experiment. The film heated 1 h at 550 oC was partly crystallized but at 650 oC was almost whole crystallized. The film heated 1 h at 750 oC quite crystallized and some precipitation appear. Heated 50 h at 450 oC before crystallization the films would be accelerate B19' but restrain B19 formation in succeeding heat-treatment.
Authors: Yasuhiro Shigetoshi, Susumu Tsukimoto, Hidehisa Takeda, Kazuhiro Ito, Masanori Murakami
Abstract: The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500 °C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.
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