Papers by Keyword: Sputtering

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Authors: K. Matsumoto, Y. Chen, J. Kuzmik, Shigehiro Nishino
Authors: Supakanya Khanchaiyaphum, Charnnarong Saikaew, Parinya Srisattayakul, Naphatara Intanon
Abstract: Improving the surface quality of various machine components can extend their lifespans by several orders of magnitude. Thin film coating is one approach that can be used to enhance machine part surface quality. In this work, three different thin film coatings (i.e, CrN, CrC and Cr-C-N) were statistically compared for surface quality improvement of fishing-net weaving machine component, namely an upper hook. All coatings were deposited utilizing DC sputtering technique. The effects of coating types on hardness for both hardchrome and non hardchrome coated upper hooks were systematically investigated using one-way analysis of variance (ANOVA). Scanning electron microscope (SEM) and energy dispersive X-ray (EDX) were used to examine the surface quality of the machine component. This study found that CrN gave very high hardness values of 13.042 GPa for hardchrome coated upper hooks and 12.583 GPa for non-hardchrome coated upper hooks. However, the averages hardness of the hardchrome coated and non-hardchrome coated upper hooks were not significantly different at the 95% confidence level.
Authors: Min Woo Park, Wang Woo Lee, Jae Gab Lee, Chong Mu Lee
Abstract: Chromium (Cr) films were deposited on plain carbon steel sheets by DC and RF magnetron sputtering as well as by electroplating. Effects of DC or RF sputtering power on the deposition rate and properties such as hardness and surface roughness of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. The deposition rate, hardness and surface roughness of the Cr film deposited by either DC or RF sputtering increase with the increase of sputtering power. The deposition rate and hardness of the Cr film deposited by DC sputtering are higher than those of the Cr film deposited by RF sputtering, but RF sputtering offers smoother surface. The sputter-deposited Cr film is harder and has a smoother surface than the electroplated one.
Authors: Weiguang Zhu, Jie Deng, Ooi Kiang Tan, Xiao Feng Chen
Authors: Fuh Liang Wen, Yu Lin Lo, C.H. Lin, Shann Chyi Mou
Abstract: The pulse DC plasma system offers so highly instant power to generate extremely intense plasma density that its applications are widely extended. In this work, the development of pulse DC plasma processing is studied for the sheet resistors, and the manufacturing mechanism relative to the properties of copper particles deposited on plastic materials is discussed by using atomic force microscopy and line-resistance measured technique.
Authors: Yan Hui Yuan, He Jun Du, Pei Hong Wang
Abstract: A micro silicon cantilever actuated by ZnO thin film was designed, fabricated and characterized. The ZnO thin film was deposited by RF sputtering at room temperature. The transverse piezoelectric constant d31 was found to be-4.66 pC/N. Time and frequency responses of the cantilever actuator were investigated by means of a laser Doppler vibrometer. The actuator has a sensitivity of 12 nm/V at 15 kHz. Its 1st bending resonance was observed at 53 kHz. The bandwidth was found to be 27 kHz with damping of 0.35%. The cantilever demonstrated capability of high frequency actuation on a nanometer level.
Authors: Cătălin Andrei Țugui, Mihai Axinte, Carmen Nejneru, Petrică Vizureanu, Manuela Cristina Perju, Daniela Lucia Chicet
Abstract: Plasma nitriding has significant advantages: very low running costs (reduced consumption of energy and gases); optimized structure and layers; and nitriding of stainless steels. Plasma nitriding is totally safe and has no poisonous gas emissions and no negative environmental impact. However, conventional plasma nitriding has a number of well-known difficulties, including the direct application of plasma on the parts to be treated, the risk of arcing, hollow cathodes, white layers, non-homogenous batch temperature and the impossibility to mix parts of different geometries in the chamber made this technology to be almost forgotten. In the last years, due to the ecofriendly character of the technology, several atempts were made in order to establish an improvement in this technique in terms of batch damages. Active screen plasma nitriding technology is a new industrial solution that enjoys all the advantages of traditional plasma nitriding but does not have its inconveniences. A comparative study regarding quality surface and formed layer properties between conventional plasma nitriding and active screen plasma nitriding was conducted, in order to highlight the advantages that comes with this relatively new technique.
Authors: Ayesha Courrech Arias, Leandro García-González, Julian Hernandez Torres, Teresa Hernandez Quiroz, Gonzalo Galicia Aguilar
Abstract: HfN is a transition metal nitride that shows interesting mechanical and chemical properties for using electronic, mechanical, corrosion, wear areas. In this work HfN thin films were fabricated by D.C. sputtering varying nitrogen flux. The Ar/N2 ratio used inside in the deposition chamber was 10, 6.66, 5, 4 and 3.33. The obtained films were analyzed by X-ray diffraction, Vickers microhardness, high resistivity measurement package and tested by D.C. electrochemical techniques in order to know their crystalline structure, hardness, resistivity and corrosion resistance. We found that a straight relationship of resistivity and crystalline structure with Ar/N2 flux ratio, because of decreasing that ratio resistivity increases meanwhile hardness decreased, this behavior due to amorphous phase of HfN. Electrochemical tests showed that sample at Ar/N2 ratio = 5 showed the maximum polarization resistance while the sample at Ar/N2 ratio = 4 showed less polarization resistance value. All results establish that HfN is a good material in corrosion and electronic areas.
Authors: S. Kawaguchi, M. Kudo, Masaki Tanemura, Lei Miao, Sakae Tanemura, Y. Gotoh, M. Liao, S. Shinkai
Abstract: A compact angle-resolved secondary ion mass spectrometer (AR-SIMS) with a special geometrical configuration, composing of a differentially pumped micro-beam ion-gun, a tiltable sample stage and a time-of-flight (TOF) mass spectrometer was applied to measure angular distribution (AD) of secondary ions ejected from VN by oblique 3 keV Ar+ sputtering at room temperature. AD of V+ was almost identical with that of N+, strongly suggesting that Gibbsian segregation did not take place during sputtering. Since the angular dependence of VN+/V+ and V2 +/V+ intensity ratios was independent of that of N+ and V+ intensities, VN+ and V2 + dimer ions were generated via the “as such” direct emission process.
Authors: Benjarong Samransuksamer, Worawarong Rakreungdet, Supattanapong Dumrongrattana, M. Horprathum, Pitak Eiamchai, Viyapol Patthanasettakul, Anurat Wisitsoraat, Pongpan Chindaudom
Abstract: The TiO2 thin films were prepared by a dc reactive magnetron sputtering technique from high purity Ti target on silicon (100) wafers and alumina substrates inter-digital with gold electrodes. The as-deposited films were annealed from 400°C up to 800°C with 100 °C steps for 1 hour in air ambience in order to promote microstructure, morphology and gas-sensing properties. The change in microstructure and morphology of the films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The enhancement in the gas-sensing properties was test by ethanol gas. The prepared thin films were exposed to ethanol gas at concentration 1,000 ppm in purify dry air carrier. The resistance was measured as a function of the ethanol concentration of the films at operated temperatures in the range of 250 - 350°C. The influence of annealing temperature at 500 °C of TiO2 thin film has a highest sensitivity at 350 °C operated temperature.
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