Papers by Keyword: Stacking Fault

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Authors: Masami Morooka, Manabu Takahashi, Fumio Hashimoto
Authors: Hiroyoki Nagasawa, Ramya Gurunathan, Maki Suemitsu
Abstract: Eelectrically active defects in 3C–SiC are investigated by considering the structures and interactions of planar defects. An anti-phase boundary (APB) largely degrades the blocking property of semiconductor devices due to its semimetallic nature. Although APBs can be eliminated by orienting the specific polar face of 3C-SiC along a particular direction, stacking faults (SFs) cannot be eliminated due to Shockley-type partial dislocation glide. SFs with Shockley-type partial dislocations form a trapezoidal plate which expands the Si-terminated surface with increasing 3C-SiC thickness. Although the density of SFs can be reduced by counter termination, specific cross-junctions between a pair of counter SFs forms a forest dislocation, and this is regarded as an electrically active defect. This paper proposes an effective way to suppress the forest dislocations and APBs which nucleate during 3C-SiC growth.
Authors: Takamitsu Kawahara, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi, Masayuki Abe, Hiroyuki Nagasawa, Bernd Zippelius, Gerhard Pensl
Abstract: The correlation between leakage current and stacking fault (SF) density in p-n diodes fabricated on 3C-SiC homo-epitaxial layer is investigated. The leakage current density at reverse bias strongly depends on the SF density; an increase of one order of magnitude in the SF density enhances the leakage current by five orders of magnitude at a reverse bias of 400 V. In order to obtain commercially suitable MOSFETs with 10-4Acm-2 at 600V, the SF density has to be reduced below 6×104 cm-2. Photoemission caused by hot electrons, which travel along a leakage path, can be observed at the crossing between a SF and the edge of p-well region; where the maximum electric field is induced. The mechanism of the leakage current is discussed in detail in a separate paper.
Authors: Anant K. Agarwal, Albert A. Burk, Robert Callanan, Craig Capell, Mrinal K. Das, Sarah K. Haney, Brett A. Hull, Charlotte Jonas, Michael J. O'Loughlin, Michael O`Neil, John W. Palmour, Adrian R. Powell, Jim Richmond, Sei Hyung Ryu, Robert E. Stahlbush, Joseph J. Sumakeris, Q. Jon Zhang
Abstract: In this paper, we review the state of the art of SiC switches and the technical issues which remain. Specifically, we will review the progress and remaining challenges associated with SiC power MOSFETs and BJTs. The most difficult issue when fabricating MOSFETs has been an excessive variation in threshold voltage from batch to batch. This difficulty arises due to the fact that the threshold voltage is determined by the difference between two large numbers, namely, a large fixed oxide charge and a large negative charge in the interface traps. There may also be some significant charge captured in the bulk traps in SiC and SiO2. The effect of recombination-induced stacking faults (SFs) on majority carrier mobility has been confirmed with 10 kV Merged PN Schottky (MPS) diodes and MOSFETs. The same SFs have been found to be responsible for degradation of BJTs.
Authors: Peder Bergman, H. Lendenmann, Per Åke Nilsson, Ulf Lindefelt, P. Skytt
Authors: Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino
Authors: Benedetto Buono, Reza Ghandi, Martin Domeij, Bengt Gunnar Malm, Carl Mikael Zetterling, Mikael Östling
Abstract: SiC BJTs are very attractive for high power application, but long term stability is still problematic and it could prohibit commercial production of these devices. The aim of this paper is to investigate the current gain degradation in BJTs with no significant degradation of the on-resistance. Electrical measurements and simulations have been used to characterize the behavior of the BJT during the stress test. Current gain degradation occurs, the gain drops from 58 before stress to 43 after 40 hours, and, moreover, the knee current shows fluctuations in its value during the first 20 hours. Current gain degradation has been attributed to increased interface traps or reduced lifetime in the base-emitter region or small stacking faults in the base-emitter region, while fluctuations of the knee current might be due to stacking faults in the collector region.
Authors: Nadezda V. Tarakina, Tatiana A. Denisova, Yana V. Baklanova, Lidia G. Maksimova, Vladimir G. Zubkov, Reinhard B. Neder
Abstract: Crystal structures of Li2MO3 (M=Sn, Ti) and TiO(OH)2 have been studied in detail and refined using X-ray powder diffraction data. All compounds posses a high concentration of defects in the structure. The crystal structures of the Li2MO3 salts obtained at 700°C reveal stacking faults of LiM2 metal layers, which leads to the appearance of short-range order in three possible space groups: C2/c, C2/m, P3112. The possibility to stabilize this imperfect state increases the mobility of the Li+ ions in the Li2TiO3 structure and allows the complete exchange of lithium by hydrogen in acid water solutions with formation of TiO(OH)2. The crystal structure of TiO(OH)2 belongs to the layered double hydroxide structure type with the 3R1 sequence of oxygen layers and can be described as a stacking of charge-neutral metal oxyhydroxide slabs [(OH)2OTi2O(OH)2].
Authors: Nicolaas Stolwijk, Hartmut Bracht, H.-G. Hettwer, Wilfried Lerch, Helmut Mehrer, A. Rucki, Wolfgang Jäger
Authors: Stefano Gialanella, Luca Lutterotti
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