Papers by Keyword: Surface Oxide Layer

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Authors: T. Matsukawa, K. Sugawara, Satoshi Tanaka, Nozomu Uchida, Keizo Uematsu, Yoshikazu Shinohara, Masato Uehara
Authors: Hidetoshi Umeda, Goroh Itoh, Yoshinori Kato
Abstract: The effect of heat treatment conditions such as atmosphere, temperature, annealing time and alloying elements on the hydrogen content in Al-Mg based alloys was investigated. The hydrogen content after annealing depends on the annealing atmospheres and alloying elements. When annealed in a wet atmosphere, the release of the hydrogen in the Al-Mg alloys to outside and the absorption of hydrogen from atmosphere into Al-Mg alloys are presumed to occur at the same time. The oxide layer on the surface is revealed to prevent the hydrogen from being released to outside. The spheroidal MgO particles can be seen on the surface of Al-Mg alloys after annealing at 550°C. The number of the MgO particles increases with increasing impurity elements such as Si and Fe, reducing the shielding effect against hydrogen permeration. Therefore, the condensation of hydrogen near the surface after annealing occurs more easily in an Al-Mg alloy of a high-purity than that of an ordinary purity.
Authors: Shoko Suyama, Yoshiyasu Itoh
Abstract: Reaction-sintered silicon carbide of 800 MPa class bending strength had been newly developed. The developed silicon carbide showed good rigidity, high thermal conductivity, and high density, like a conventional sintered silicon carbide. The developed silicon carbide is one of the most attractive materials for large-scale ceramic structures because of its low processing temperature, good shape capability, low-cost processing and high purity. We had fabricated some lightweight space mirrors, such as a high-strength reaction-sintered silicon carbide mirror of 650 mm in diameter. In this study, experiments were conducted to investigate the effect of annealing on the bending strength of high-strength reaction-sintered silicon carbide. The annealing heat treatments were carried out at 1073 K, 1273 K, and 1473 K in an air atmosphere. The maximum bending strength of 1091 MPa at room temperature was achieved by the annealing heat-treatment at 1273 K for 10 h in air. We confirmed that annealing heat treatment was effective to improve the bending strength of reaction-sintered silicon carbide by inducing compressive residual stress at the surface oxide layer.
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