Papers by Keyword: Thermal Oxidation

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Authors: L.Y. Low, Mat Johar Abdullah, N.H. Al-Hardan
Abstract: We report the deposition of aluminium doped zinc nitride film (Al-Zn3N2) on glass substrates by RF sputtering. Thermal oxidation of the film under different annealing temperature (500°C to 600°C) was carried out. Structural and electrical properties of the annealed films were investigated. XRD analysis showed that Al-Zn3N2 film was successfully converted into Al-N zinc oxide (ANZO) at 500°C. I-V characteristics of the films were measured and the lowest estimated resistivity of the films of 4kΩ.cm can be achieved at 600°C.
294
Authors: Satoshi Hayakawa, Keita Uetsuki, Akinori Kochi, Yuki Shirosaki, Akiyoshi Osaka
Abstract: A recently developed “GRAPE® technology” provides titanium or titanium alloy implants with spontaneous apatite-forming ability in vitro, which requires properly designed gaps and optimum heat treatment in air. In this study, pure titanium pieces were thermally oxidized in air and pre-irradiated by UV-light under different environmental conditions such as in air or in ultra-pure water before aligning pairs of specimens in the GRAPE® set-up, i.e., two pieces of titanium substrates were aligned parallel to each other with optimum gap width (spatial design). Then, they were soaked in Kokubo’s simulated body fluid (SBF, pH7.4, 36.5°C) for 1-2 days to clarify how the UV-light pre-irradiation affects the in vitro apatite nucleation on the substrates under the specific spatial design. UV-light pre-irradiation in water led to the deposition of a large number of apatite particles within 1 day, and showed apatite X-ray diffraction, although UV-light pre-irradiation in air and non-pretreated specimens gave the deposition of a few apatite particles and did not show any apatite X-ray diffraction. These results indicated that the rate of primary heterogeneous nucleation of apatite increased by UV-light pre-irradiation in ultra-pure water. TF-XRD patterns of the surface of the substrates thermally oxidized in air at 500°C showed the peak at 2θ = 27º assignable to the 110 diffraction of rutile phase of titanium dioxide (ICDD-JCPDS data #21-1276). Previous studies reported that the primary heterogeneous nucleation must be induced by Ti-OH groups on titanium oxide layer. Probably, the UV-light pre-irradiation in ultra-pure water can increase the number of Ti-OH groups on the surface, resulting in accelerated primary heterogeneous nucleation of apatite.
936
Authors: Hasan Güleryüz, Erdem Atar, Fared Seahjani, Hüseyin Çimenoğlu
Abstract: In this paper, diffusional surface hardening processes utilized to overcome the poor tribological performance of titanium and its alloys is briefly introduced. More specifically, surface treatments known as thermal oxidation, nitriding and boriding offering the advantage of producing graded surfaces comprising hard compound layer and diffusion zone by diffusion of interstitial atoms (oxygen, nitrogen and boron) are overviewed.
103
Authors: Judith Woerle, Massimo Camarda, Christof W. Schneider, Hans Sigg, Ulrike Grossner, Jens Gobrecht
Abstract: In this study, electrical properties of MOS capacitors with varying oxide thicknesses have been investigated. The oxide growth was performed at 1050 °C without any further post-oxidation annealing steps resulting in oxide thicknesses between 2 nm and 32 nm. Capacitance-Voltage measurements revealed a decreasing density of interface defects for increasing oxide thickness suggesting a deterioration of the interface at the initial stage of the growth.
119
Authors: Dimitri Aslanidis, Akiyoshi Osaka, Satoshi Hayakawa, Kanji Tsuru
291
Authors: Seong Joo Jang, H.J. Song, K.Y. Oh, K.H. Lee, Y.J. Lim, Nam Ihn Cho
1017
Authors: Suphaporn Daothong
Abstract: Iron oxide nanowires were synthesized on stainless steel mesh substrate using the thermal oxidation process at the varying temperature of 750°C for 60 min. The samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD pattern showed that the iron oxide nanowires exhibited the structure of alpha-Fe2O3 (hematite). SEM images indicated that the diameter and the length of the nanowires were 80 to 285 nm and more than 5 μm, respectively. The dye-sensitized solar cell (DSC) properties based on the nanowires substrate was also studied. It was found that the power conversion efficiency (η) of the device was 0.11%.
217
Authors: Carl Mikael Zetterling, Mikael Östling, Chris I. Harris, Nils Nordell, K. Wongchotigul, Michael G. Spencer
877
Authors: Koji Nakayama, Ryosuke Ishii, Katsunori Asano, Tetsuya Miyazawa, Masahiko Ito, Hidekazu Tsuchida
Abstract: Forward voltage drops of carbon implanted and thermal oxidized pin diode with thick drift layer are investigated to evaluate the effect on the lifetime. The forward voltage drops of the carbon implanted and thermal oxidized pin diodes with drift layer of 120 μm thick were around 4.0 V. Furthermore, blocking characteristics of 4H-SiC pin diodes with mesa-JTE, which were fabricated on C-face and Si-face substrates, are also investigated. The breakdown voltages of pin diodes with 250 μm and 100 μm epitaxial layers are 17.1 kV and 10.9 kV, respectively.
535
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