Papers by Keyword: Thick Film

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Authors: Kazutaka Sasaki, Ludwig J. Gauckler
197
Authors: Florence Ansart, Jean Pierre Bonino, P. Lenormand, Ch. Robert, Céline Viazzi
529
Authors: Janina Setina, V. Akishins
Abstract: The article gives an overview of suitability of three kinds of phosphorus-containing glass systems: phosphate, alumosilicate phosphate and fluorophosphate for production of thick-films. Amorphous compositions based on metaphosphate glasses characterize high electric resistivity, thermal expansion coefficients matching with substrate, appropriate viscosity-temperature relationship, and suitable chemical reactivity, that they can be applied in thick-film technology for screen printed resistors on alumina substrate as an alternative of lead borosilicate glasses. Alumosilicate phosphate glasses are the base for the wide range of glass-crystalline high temperature materials (operating up to 10000C) for sealing of the silicon chip in microelectronics. Perfect adhesion of glass ceramics with substrate (the transition zone 5-7.5 μm) is provided by the formation of chemical bond with the oxidized surface of silicon and by the occurrence of analogous structural elements on the silicon surface and in the glass-ceramics. Due to the unique optical properties, low melting temperature of fluorine containing borophosphate glasses (FBP) can be used as brazing material (optical glue) for SiO2 glass optical fiber construction knots.
1111
Authors: Dong Yun Guo, Akihiko Ito, Rong Tu, Takashi Goto
Abstract: Ba2TiO4 and Ba4Ti13O30 Thick Films Were Prepared by Laser Chemical Vapor Deposition Using Ba- and Ti-Dipivaloylmethanate Precursors. Single-Phase Ba2TiO4 Thick Films Were Obtained at 845–946 K and Ba/Ti Source Molar Ratio 2.4. Single-Phase Ba4Ti13O30 Films Were Obtained at 944–1011 K and Ba/Ti Source Molar Ratio 0.38. Ba2TiO4 Thick Films Consisted of Truncated Grains, while Ba4ti13o30 Thick Films Had Shellfish-Like Grains. Ba2TiO4 and Ba4Ti13O30 Thick Films Showed a Columnar Growth and their Deposition Rates Were 72 and 132 μm h−1, Respectively.
199
Authors: Gang Tang, Jing Quan Liu, Yi Gui Li, He Sheng Liu, Chun Sheng Yang, Dan Nong He, Viet Dzung Dao, Katsuhiko Tanaka, Susumu Sugiyama
Abstract: The paper reports on the PZT thick films preparation method by bonding bulk PZT on Si and then lapping PZT to suitable thicknesses. Epoxy resins with preferable thermostability were used as the intermediate adhesive layer in bonding process. A tight bonding of more than 10MPa was attained at suitable gradient bonding temperatures in an oven which were from 30 oC up to 105 oC according to 15 oC per thirty minutes and holding for more than 3h at 105 oC, and a pressure of more than 0.05MPa. Some properties of the prepared PZT thick films were tested. Finally, a piezoelectric MEMS power generator was fabricated by using the described techniques of PZT thick films preparation on silicon. The maximum output voltage under the resonant operation was measured.
1115
Authors: Yoshiaki Kinemuchi, H. Morimitsu, H. Ishiguro, Shoji Uchimura, Koji Watari
Abstract: Co-firing of multiple materials results in the formation of internal stress due to the difference in shrinkage behavior. This internal stress causes retardation of sintering, crack formation and/or de-lamination at the interface. To reduce internal stress in layered structures, homogeneous pressing via centrifuge has been attempted. The effect of centrifugal pressing was demonstrated by film sintering, in which crack suppression and void removal by the present process were revealed. Owing to the homogeneous microstructure, the thermal stability of the film was significantly improved.
19
Authors: Yoshiaki Kinemuchi, Hirohide Ishiguro, Shoji Uchimura, Koji Watari
Abstract: Centrifugal sintering is a novel process for the preparation of thick films. In this process, high gravity such as 104g is applied at high temperatures. Because of the distinctive measure of pressing by the centrifugal force, gradient of pressure arises in the specimen, resulting in the graded porous structure during the progress of sintering. After the sintering, highly densified thick films are obtained. Furthermore, crack formation was suppressed by this process.
685
Authors: Koji Watari, Yoshiaki Kinemuchi, Kiminori Sato, Shoji Uchimura
757
Authors: R.A. Dorey
Abstract: Lead zirconate titanate (PZT) thick films, a few tens of micrometres thick, are of technological interest for integration with microsystems to create micro electromechanical systems (MEMS) with high sensitivity and power output. This paper examines the challenges faced in integrating thick film PZT with other materials to create functional micro devices. Thermal, chemical and mechanical challenges associated with integration will be examined and potential solutions explored.
43
Authors: Jo Lene Tan, Kuan Yew Cheong, Rusli
Abstract: Physical and electrical properties of sol-gel derived SiO2 thick film (100-130 nm) deposited on n-type 4H-SiC have been investigated. The oxide was annealed in argon gas ambient for 30 minutes at 650, 750, 850, and 950°C, in order to optimize the oxide properties. Results indicated that the oxide is denser with a significant reduction in percentage of porosity as the annealing temperature increases, except for sample annealed at 950°C. The oxide annealed at 850°C was having values of refractive index and dielectric constant close to the values reported in thermally grown SiO2 and it has demonstrated the lowest leakage current density and total interface trap density. Viscous shear flow effect has been proposed as the main contributor for the reduction of physical properties when the oxide was annealed at 950°C.
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