Papers by Keyword: Thin Film Growth

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Authors: Pia C. Lansåker, Klas Gunnarsson, Arne Roos, Gunnar A. Niklasson, Claes Goran Granqvist
Abstract: Thin films of Au were made by sputter deposition onto glass substrates with and without transparent and electrically conducting layers of SnO2:In. The Au films were up to ~11 nm in thickness and covered the range for thin film growth from discrete islands, via large scale coalescence and formation of a meandering conducting network, to the formation of a more or less “holey” film. Scanning electron microscopy and atomic force microscopy showed that the SnO2:In films were considerably rougher than the glass itself. This roughness influenced the Au film formation so that large scale coalescence set in at a somewhat larger thickness for films on SnO2:In than on glass. Measurements of spectral optical transmittance and electrical resistance could be reconciled with impeded Au film formation on the SnO2:In layer, leading to pronounced “plateaus” in the near infrared optical properties for Au films on SnO2:In and an accompanying change from such two-layer films having a lower resistance than the single gold film at thicknesses below large scale coalescence to the opposite behavior for larger film thicknesses.
Authors: H. Högberg, J. Emmerlich, P. Eklund, Ola Wilhelmsson, Jens Petter Palmquist, Ulf Jansson, L. Hultman
Abstract: Epitaxial Mn+1AXn phase (n=1, 2 or 3) thin films from the chemically related Ti-Si-C, Ti-Ge-C, and Ti-Sn-C systems were grown on Al2O3(0001) substrates at temperatures in the region of 700-1000 oC, using d.c. magnetron sputtering from individual sources. In addition to growth of the known phases Ti3SiC2, Ti3GeC2, Ti2GeC, and Ti2SnC the method allows synthesis of the new phases Ti4SiC3, Ti4GeC3, and Ti3SnC2 as well as the intergrown structures Ti5A2C3 and Ti7A2C5 in the Si and Ge systems. Characterization by XRD, TEM and nanoindentation show similarities with respect to phase distribution, mechanical, and electrical properties, particularly pronounced when comparing Si and Ge. The Ti-Sn-C system is, however, the most liable system with respect to surface segregation of the A-element. This causes less favorable growth of MAX phases as seen by a preferential growth of the binary carbide TiC and metallic Sn. Nanoindentation on films from the Ti-Si-C and Ti-Ge-C systems shows large plastic deformation with extensive pile up. The typical thin film hardness is 20 GPa, and the Young’s modulus in the region of 320 GPa. The four-point probe resistivity is low for all systems, but differs depending on materials system and phase, with values of 25 μcm for Ti3SiC2, and 17 μcm for Ti2GeC.
Authors: Erika Jiménez, Nikolai Mikuszeit, Demetrio R. Cavicchia, Lorella Rossi, Franco D'Orazio
Abstract: Ferromagnetic (FM) FeCo is investigated in exchange bias systems. The ferromagnetic layer is grown on a FeMn antiferromagnetic (AFM) layer. Partial superficial oxidation of FeCo is observed. The standard field cooling procedure results in a large room temperature exchange bias effect. However, the training effect observed when the hysteresis loops are repeated does not have a saturating trend. This behavior is related to the evolution of pinned moments at the FM/AFM interface. X-ray circular magnetic dichroism technique is used to clarify this mechanism.
Authors: J.S. Gold, J.S. Lannon, Jr., V.L. Tolani, K.S. Ziemer, C.D. Stinespring
Authors: Bo Xiong Zhao, Yu Jian Du, Xin Sui
Abstract: Thin film technologies are widely used in modern scientific and technological fields .The theory of thin film growth is guidance for developing a new-type materials and improving the properties of custom thin film materials .In this article , the studies of thin film growth are carried out. The studies are made a simulation of surface growth of the GaxIn1-xAs1-ySby and YBCO film, Schematic diagram of the surface morphology under different substrate temperature of thin film growth are obtained and analyzed .Many significant results are found. First of all ,the background of the topic ,research purpose and significance are described in this article .Then the studies of thin film growth are carried out ,to analyse the effects of different elements on the surface of the crystal film.
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