Papers by Keyword: Trap

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Authors: Chun Long Li, Xiang Qun Wang, Zhi Huang, Zeng Hua Zhang, Xiao Yan Sun, He Wang
Abstract: High-capacity OLT equipments are widely used in modern communication network. Among the communication equipments, realization of alarm function has an important research significance and wide application prospect. The article simply introduces the demand of alarm of OLT devices and simple network management protocol SNMP and explains the method of realizing alarm information by using SNMP trap. It also introduces the construction of trap message and explains the process and action of network management system after receiving trap information in detail, as a result, realizes the alarm design of high-capacity OLT equipment.
Authors: Gernot Gruber, Markus Koch, Gregor Pobegen, Michael Nelhiebel, Peter Hadley
Abstract: Only a few methods exist to observe, identify, and localize defects in SiC devices. These defects are a major limit for device performance and reliability. Presented is an improved experimental setup to investigate deep level defects using electrically detected magnetic resonance (EDMR). The method applied in this study exploits the simultaneous in-situ electron spin resonance (ESR) measurement of a standard sample (DPPH) to calibrate the magnetic field. The functionality is shown by comparing the data of an ion implanted SiC diode to results from a recent study . The in-situ B-field calibration is found to increase the accuracy of EDMR measurements by a factor of 2.5.
Authors: G. Gabrielse, W. Jhe, D. Phillips, R. Kaiser, H. Kalinowsky, J. Gröbner
Authors: Hong Ling Xie, Huan Yu Fan, Yan Qing Li, Fei Long Wang
Abstract: Leakage demolition of temporary ground wires often leads to accidents named closing circuit breaker. For this, a detection device is designed in this paper, which is exclusive for the detection of temporary ground wires connected to the ground through towers. Traps present low impedance for 50Hz induced signal while they present high impedance for 200Hz sinusoidal signal, thus inducted current will flow into the earth through the path of traps and ground wires. The amplitude of 200kHz signal collected by the MCU is related to whether there are temporary ground wires connected to power lines. The MCU completes digital filtering work of the collected signal and counts the number that amplitude above the threshold voltage to determine whether there are any temporary ground wires connected to power lines.
Authors: Yasufumi Fujiwara, Atsushi Koizumi, Kazuhiko Nakamura, Masato Suzuki, Yoshikazu Takeda, Masayoshi Tonouchi
Abstract: We have fabricated GaInP/Er,O-codoped GaAs (GaAs:Er,O)/GaInP double heterostructure (DH) light-emitting diodes (LEDs) and successfully observed 1.5 µm electroluminescence (EL) due to an Er-2O center under forward bias at room temperature. Er excitation cross section by current injection decreased with increasing GaAs:Er,O active layer thickness, implying reduced diffusion length of injected carriers in the active layer. Carrier dynamics in GaAs:Er,O have also been investigated by means of a pump and probe reflection technique. Time-resolved reflectivity of GaAs:Er,O exhibited a characteristic dip after a steep decrease to negative in less than 10 ps. The analysis of the characteristic dip revealed short lifetime in range of ps for photoexcited carriers. The extremely short lifetime is quite coincident with the reduced diffusion length of injected carriers, and suggests that a trap induced by Er and O codoping would play an important role in dynamics of nonequilibrium carriers in GaAs:Er,O.
Authors: Yutaka Tokuda, Youichi Matsuoka, Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi
Abstract: Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level transient spectroscopy. MA1 and MA2 are electron traps commonly observed in n GaN on n+ GaN and sapphire substrates. No dislocation-related traps were observed in n GaN on n+ GaN. Among five traps in GaN pn on GaN, MI3 is the main trap with the concentration of 2.5x1015 cm-3.
Authors: M. Gassoumi, N. Sghaier, I. Dermoul, F. Chekir, H. Maaref, Jean Marie Bluet, Gérard Guillot, Erwan Morvan, Olivier Noblanc, Christian Dua, Christian Brylinski
Authors: Tetsuo Hatakeyama, Mitsuru Sometani, Kenji Fukuda, Hajime Okumura, Tsunenobu Kimoto
Abstract: Constant-capacitance deep-level transient spectroscopy was carried out to characterize in detail interface states close to the conduction band edge in SiO2/SiC structures. The measured results are summarized as follows: (1) The capture of electrons by the interface states proceeds logarithmically with time. (2) The emission of electrons accelerates slightly with increasing density of captured electrons. The oxide trap model explains the logarithmic change in capture with time but not the phenomenon of accelerated emissions. This prompted us to formulate a new model that replicates the logarithmic capture process with time. In this model, we postulated the electron density at the interface decreases exponentially as the trapped electron density increases owing to the interaction between the trapped electrons and the free electrons. In this case, the capture process is almost the same as with the oxide trap model except for the definition of parameters. Further, we do not need to take into account the delay of the emission process caused by tunneling. The phenomenon of accelerated emissions may be explained by interactions among captured electrons in this model.
Authors: Tetsuo Hatakeyama, T. Shimizu, T. Suzuki, Y. Nakabayashi, Hajime Okumura, K. Kimoto
Abstract: Constant-capacitance deep-level-transient spectroscopy (CCDLTS) characterization of traps (or states) in SiO2/SiC interfaces on the C-face was carried out to clarify the cause of low-channel mobility of SiC MOSFETs. CCDLTS measurements showed that the interface-state density (Dit) near the conduction band of SiO2/SiC interfaces fabricated using N2O oxidation was much higher than that of SiO2/SiC interfaces fabricated using wet oxidation. The high density of interface states near the conduction band is likely to be the main cause of the low mobility of MOSFETs fabricated using N2O oxidation.
Authors: A.R. Frederickson, P.J. Drevinsky
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