Papers by Keyword: Uniformity

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Authors: Akira Miyasaka, Jun Norimatsu, Keisuke Fukada, Yutaka Tajima, Yoshiaki Kageshima, Daisuke Muto, Michiya Odawara, Taichi Okano, Kenji Momose, Yuji Osawa, Hiroshi Osawa, Takayuki Sato
Abstract: The production of 150 mm-diameter SiC epitaxial wafers is the key to the spread of SiC power devices. We have developed production technology of the epitaxial growth for 4° off Carbon face (C-face) 4H-SiC epitaxial layers on 150 mm diameter substrates. Several growth parameters and hardware were optimized to obtain high uniformity wafers. We have succeeded in fabricating high quality C-face wafers with smooth surface and high uniformity.
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Authors: Michael Winters, Mattias Thorsell, Jawad ul Hassan, Niklas Rorsman, Erik Janzén, Herbert Zirath
Abstract: Abstract. The aim of this study is to compare DC characteristics of ‘as-grown’ and hydrogen (H)-intercalated epitaxial graphenes on SiC substrates [1,2]. Epitaxial graphene is grown on SiC at 1400-1600C, and H-intercalation is performed via in-situ introduction of Hydrogen during the graphitization process [6]. The fabrication processing steps used to define test structures are identical for the two materials. Results on the DC behaviour and uniformity issues with respect to both materials are reported. As-grown material behaves as a linear resistance, while H-intercalated demonstrates a non-linear characteristic. Hysteresis effects and time dependent behaviors are also observed in both materials. Extensive Hall measurements are performed on both materials with the aim of providing a qualitative understanding of material uniformity in both epi-graphenes.
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Authors: James D. Oliver, Brian H. Ponczak
Abstract: A series of designed experiments have been conducted over a period of years in a multiwafer, planetary rotation, epitaxial reactor to quantify the effects of various epitaxial growth process parameters on the resulting SiC epitaxial layers. This paper summarizes the results obtained through statistically designed experiments varying process parameters and their resultant effect on the layer thickness, carrier concentration and the variability of these parameters wafer-to-wafer, and within a wafer.
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Authors: Shi Wei Zhang, Li Yuan Hou, Yong Chao Han, Yuan Hua Xie
Abstract: In the process of manufacturing the composite materials, some of the chemical components are difficult to combine with each other. Aiming at this problem, a new method and supporting equipment of manufacturing the composite powder materials is reported which can make any two (or more) kinds of components mixing in nano-scale. This method is derived from the vacuum co-depositing technology by two (or more) vaporization sources for vacuum film coating, and some of the structures in vacuum film coil coating machine are used for reference. The principle, structure, process and characteristics of this method are introduced in detail. The models for depositing rate calculation are built respectively for both the electric resistance evaporation sources and the magnetron sputtering targets. The mixing component uniformity in the depositing powder material is analyzed by calculation.
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Authors: Wei Zhang, Yue En Li
Abstract: There are many western style historical buildings in China, and the old buildings need a renovation and protection for their historical value in culture and facilities. It is an important protection problem for the culture symbols and historical building renovation. In this paper, it presents a old cultural building’s renovation process following the a interior design project management guideline, as the public old building, it should consider its old structure and modern building corresponding, the project cost and the craft combine together in this case study, as the successful case and field symbolic building, it shows a new characters around that place.
207
Authors: Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Tetsuya Miyazawa, Hideyuki Uehigashi, Keisuke Fukada, Hiroaki Fujibayashi, Masami Naitou, Kazukuni Hara, Hitoshi Osawa, Toshikazu Sugiura, Takahiro Kozawa
Abstract: This paper reports on recent advances in 4H-SiC epitaxial growth toward high-throughput production of high-quality and uniform 150 mm-diameter 4H-SiC epilayers by enhancing of growth rates, improving uniformity and reducing defect densities. A vertical single-wafer type SiC epitaxial reactor is employed and high-speed wafer rotation is confirmed as effective, not only for enhancing growth rates without increasing the source gas supply but also improving thickness and doping uniformities. The current levels of reducing particle-induced defects, in-grown stacking faults, basal plane dislocations and the Z1/2 center (carbon vacancies) are reviewed.
119
Authors: Alexander Lippert, P. Engesser, Garry Ferrell, J. Klitzke, Martin Köffler, Franz Kumnig, Jörg Leberzammer, Alexander Pfeuffer, Rainer Obweger, Harry Sax, Harald Okorn-Schmidt
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Authors: Dong Fang Zhao, Feng Guo Liu
Abstract: This paper investigated a new type of gas distributor with two chambers by CFD software. The distributor has a natural gas inlet and nine nozzle outlets. For the investigation of this project, the mass flow rate of the distributor was analyzed in this paper to provide a way to optimize the structure of distributor. The N-S equations approached with the RNG k-ε turbulence model and the discretization were employed second order upwind. The simulation results will provide a number of useful suggestions and references for the further design.
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Authors: Andrzej Golabczak, Andrzej Konstantynowicz, Marcin Golabczak
Abstract: In the paper a new method has been proposed for the determining of the very fine machining uniformity over the elaborated surface and could be applied to different machined materials and machining procedures. The proposed methodology is relatively simple and is essentially formulated in the few subsequent steps: taking surface roughness 3D profile accordingly proposed scheme; estimation of the roughness statistical parameters: Rp, Rv, Rt, Ra, Rq, Rskew, Rkurt, and if need be – surface rugosity Ru; calculation of the centroid of the obtained data due to the measurement fields, calculation of the barycentre of the obtained data with the weighting variable chosen for the appropriate evaluation of the surface machining uniformity. As the main Cartesian coordinates of the centroid calculation we propose (Rskew, Rkurt), although other data organization schemes have also been provided as the example solutions. The final evaluation of the surface machining uniformity is based upon the Euclidean distance between the centroid and barycentre of the surface roughness data. The proposed method has been applied to experimental results obtained with the AFM technique used on samples of the polished AZ31 magnesium alloy. The surface machining procedure comprised of four stages performed with using different abrasive media, finally lead to the highest grade of the surface roughness.
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Authors: Zhuo Chen, Zhi Xiong Huang, Rong Yang Dou, Jing Dai, Min Xian Shi, Jia You Ji
Abstract: In this Research a Method for Computer Simulation Model of Composite Materials, which Are Reinforced by Multi-Size Particles, Is Introduced. All Particles Are Embedded in the Matrix Randomly. Composite of Different Particle Volume Fraction Were Simulated and Visualized. Statistic Results Shows that the Particles Disperse Distribution Are Uniform which Could Be Used in the Further Study of Composite.
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