Papers by Keyword: Vapor Liquid Solid Mechanism

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Authors: Pierre Ferret, A. Leray, G. Feuillet, P. Lyan, C. Pudda, Thierry Billon
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Authors: Maher Soueidan, Olivier Kim-Hak, Gabriel Ferro, Patrick Chaudouët, Didier Chaussende, Bilal Nsouli, Yves Monteil
Abstract: We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS) mechanism on various α-SiC substrates, namely on- and off-axis for both 4H and 6H-SiC(0001), Si and C faces. The Si-Ge melts, which Si content was varied from 25 to 50 at%, were fed by 3 sccm of propane. The growth temperature was varied from 1200 to 1600°C. It was found that singledomain 3C-SiC layers can be obtained on 6H-SiC off and on-axis and 4H-SiC on-axis, while the other types of substrate gave twinned 3C-SiC material. As a general rule, one has to increase temperature when decreasing the Si content of the melt in order to avoid DPB formation. It was also found that twinned 3C-SiC layers form at low temperature while homoepitaxy is achieved at high temperature.
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Authors: Long Hai Shen, Nan Wang
Abstract: The experiments were carried out in a horizontal tube furnace using Al and NH3 as the source materials. The structure and morphology of the as-synthesized AlN nanowires are characterized by X-ray diffraction, scanning electron microscopies and Raman spectrum. The results indicated that the structure of synthesized AlN nanowire is hexagonal wurtzite structure, the length of the AlN nanowire is between several micrometers and the the average diameter is about 100 nm.The growth of the AlN nanowires can be expelained by vapor–liquid-solid mechanism.
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