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Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN

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Abstract:

Pd Schottky diode exhibited stable rectifying behavior up to 500°C for 35 minutes in sequential annealing; with the Schottky barrier heights (SBHs), ΦB (I-V) of 0.6-0.7eV with the leakage current (LC) of 20 A at -5V. With the same range of SBHs, PdSi diodes were stable up to 500°C for 5 minutes with the LC of 0.182mA at -5V. The electrical characteristics obtained in this study are also compared with those obtained for Pd and PdSi Schottky diodes on p-GaN.

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Periodical:

Materials Science Forum (Volume 517)

Pages:

242-246

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.517.242

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Online since:

June 2006

Authors:

C.K. Tan, Azlan Abdul Aziz, F.K. Yam, C.W. Lim, Hassan Zainuriah, A.Y. Hudeish

Keywords:

Leakage Current, P-Type Gallium Nitride, Schottky Barrier Height SBH, Surface Morphology, Thermal Treatment

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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