Paper Titles
The Study of Thermal Treatment on Electrical Properties at Cr/p-GaN
p.247
Mechanochemical Synthesis of Nanocrystalline CeO2: The Effect of Annealing Temperatures on the Particle Size
p.252
Gelification Effects on the Structure and Birefringence of Charge Transfer Complex Terthiophene Bisililated – TCNQ Hybrid Materials
p.257
Pinning Fermi Level of p-GaN due to Three Different (Zr, Ti, and Cr) Metal Contact
p.262
Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)
p.267
Modification of Epoxy Resin Using Liquid Natural Rubber
p.272
Comparative Studies on Li/LiI-Li2WO4-Li3PO4/Metal Oxide Electrochemical Cells
p.275
Studies on the Corrosion Protection Property of Acrylic Resin Mixed with Curcumin and Dammar
p.278
Investigation on Ag/Ti Ohmic Contacts to Si-Doped n-Type Al0.27Ga0.73N and the Effect of Post Annealing Treatments
p.281

Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)

Article Preview

Abstract:

The effects of Indium doped on Porous Silicon Nanostructure (PSN) have been studied. The Electroluminescence studies on Indium-doped porous silicon nanostructure (In:PSN) are presented. The main objective of this paper is study the EL effects of Indium doping on PSN. Porous silicon nanostructure layers have been formed by anodically etching unpolished p-type Si [100] wafer with surface resistivity of 1-10 ohm cm-1 in Hydroflouric (HF) solution at 1:1 ratio of Ethanol. Indium (In) was doped on PSN using cathodic electrodeposition composed of InCl3 and ethanol electrolythe. A diode structure has been fabricated comprising semi-transparent Au/In:PSN/p-Si substrate/Al ohmic contact electrode to observe the EL spectra. The In:PSN device shows increasing on EL and PL Intensity as well as blue-shift EL and PL spectrum is observed. Possible reasons for the enhancement will be discussed. Technological application of PSN as a light emitter would have significant impact on numerous technologies such as display panels or integrated circuits with optoelectronic devices (IO) on board and sensors.

You might also be interested in these eBooks
Functional Materials and Devices View Preview

Info:

Periodical:

Materials Science Forum (Volume 517)

Pages:

267-271

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.517.267

Citation:

Cite this paper

Online since:

June 2006

Authors:

Shahrum Abdullah, Muhamad Rasat Muhamad, K.A. Sekak

Keywords:

Electroluminescence, In-Doped, Photoluminescence (PL), Porous Silicon (PS)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] L.T. Canham, Appl. Phys. Lett., Vol 57, (1990) p.1046.

Google Scholar

[2] Yen-Ann Chen, et. al, Jpn.J. Appl. Phys., Vol 36, (2003) p.1574.

Google Scholar

[3] F. Koch et al., Mat. Res. Soc. Sym. Proc., Vol 283, (1993) p.197.

Google Scholar

[4] M. Brandt, H.D. Fucs, M. Stutsmann, J. Weber and M.E. Cardona, Solid State Commun., Vol 81, (2001) p.307.

Google Scholar

[5] A. Uhlir, Bell Sys. Tech. J. Appl. Phys., Vol 27, (1957) p.544.

Google Scholar

[6] M. Ben. Chorin , F. Moller, and F. Koch, J. Lumin., Vol 57, (1993) p.159.

Google Scholar

[7] M. Jeske et al., Thin Solid Film, Vol 255, (1995) p.63.

Google Scholar

[8] S. Lazarouk et al., Appl. Phys. Lett., Vol 68, (2004) p.1646.

Google Scholar

[9] Tsybeskov, S.P. Duttagupta, K.D. Hirschman and P.M. Fauchet, J.L. Lum., Vol 70, (1996) p.49.

Google Scholar

[10] P.M. Fauchet, J. Lumin., Vol 70, (1996) p.294.

Google Scholar

[11] P. Steiner, F. Kozlowski and W. Lang, Thin Solid Film, Vol 255, (2003) p.49.

Google Scholar

[12] A. G. Cullins, L.T. Canham and P.D. J. Calcott, J. Appl. Phys., Vol 82, (2002) p.3.

Google Scholar

[13] T. Ito et al., Jpn. J. Appl. Phys., Vol 34 , (2000) p. L649.

Google Scholar

[14] F. Kozlowski, P. Steiner and W. Lang, J. Lumin., Vol 57, (1993) p. 163L.

Google Scholar