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Angle Dependent Sputtering and Dimer Formation from Vanadium Nitride Target by Ar+ Ion Bombardment

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Abstract:

A compact angle-resolved secondary ion mass spectrometer (AR-SIMS) with a special geometrical configuration, composing of a differentially pumped micro-beam ion-gun, a tiltable sample stage and a time-of-flight (TOF) mass spectrometer was applied to measure angular distribution (AD) of secondary ions ejected from VN by oblique 3 keV Ar+ sputtering at room temperature. AD of V+ was almost identical with that of N+, strongly suggesting that Gibbsian segregation did not take place during sputtering. Since the angular dependence of VN+/V+ and V2 +/V+ intensity ratios was independent of that of N+ and V+ intensities, VN+ and V2 + dimer ions were generated via the “as such” direct emission process.

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AICAM 2005 View Preview

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Periodical:

Advanced Materials Research (Volumes 11-12)

Pages:

607-610

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.11-12.607

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Online since:

February 2006

Authors:

S. Kawaguchi, M. Kudo, Masaki Tanemura, Lei Miao, Sakae Tanemura, Y. Gotoh, M. Liao, S. Shinkai

Keywords:

Angular Distribution, Cluster, Secondary Ion Mass Spectroscopy (SIMS), Sputtering, Vanadium Nitride

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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