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Effects of Processing Conditions on the Dielectric Properties of CaCu3Ti4O12 Ceramics

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Abstract:

In this present work, we adopt conventional solid state reaction techniques to obtain CaCu3Ti4O12 (CCTO) ceramics and the dielectric properties of polycrystalline CCTO samples sintered in the temperature range 900 − 1100°C were investigated. X-ray diffraction (XRD) patterns show no obvious change in crystal phase with various sintering temperature. However, experimental results show that the dielectric properties of CCTO ceramics are very sensitive to processing parameters and the dependence of dielectric constant and loss tangent of CCTO ceramic on processing can be obtained. The effect of sintering conditions on the surface microstructures and the electrical properties of CCTO ceramics are also discussed in this study.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Pages:

210-212

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.336-338.210

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Online since:

April 2007

Authors:

Chih Ming Wang, Kuo Sheng Kao, Shih Yuan Lin, Ying Chung Chen, Shang Chih Weng

Keywords:

CaCu3Ti4O12 (CCTO), Dielectric Constant, Grain Size, Sintering Temperature

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] S. Ezhilvalavan and T.Y. Tseng: Mat. Chem. Phys. Vol. 65 (2000), p.227.

Google Scholar

[2] L.C. Kretly, A.F.L. Almeida, R.S. de Oliveira, J.M. Sasaki and A.S.B. Sombra: Microw. Opt. Technol. Lett. Vol. 39 (2003), p.145.

Google Scholar

[3] L.C. Kretly, A.F. Almeida, P.B.A. Fechine, R.S. de Oliveira and A.S.B. Sombra: J. Mater. Sci. Mater. Electron. Vol. 16 (2004), p.657.

Google Scholar

[4] A. Deschanvres, B. Raveau and F. Tollemer: Bull. Soc. Chim. Fr. (1967), p.4077.

Google Scholar

[5] B. Bochu, M.N. Deschizeaux and J.C. Joubert: J. Solid State Chem. Vol. 29 (1979), p.291.

Google Scholar

[6] M.A. Subramanian, D. Li, N. Duan, B.A. Reisner and A.W. Sleight: J. Solid State Chem. Vol. 151 (2000), p.323.

Google Scholar

[7] S.M. Moussa and B.J. Kennedy: Mater. Res. Bull. Vol. 36 (2001), p.2525.

Google Scholar

[8] W. Kobayashi and I. Terasaki: Physica B Vol. 329 (2003), p.771.

Google Scholar

[9] D.C. Sinclair, T.B. Adams, F.D. Morrison and A.R. West: Appl. Phys. Lett. Vol. 80 (2002), p.2153.

Google Scholar

[10] R.N. Choudhary and U. Bhunia: J. Mater. Sci. Vol. 37 (2002), p.5177.

Google Scholar

[11] T.B. Adams, D.C. Sinclair and A.R. West: Adv. Mater. Vol. 14 (2002), p.1321.

Google Scholar

[12] H. Birey: J. Appl. Phys. Vol. 49 (1978), p.2898.

Google Scholar

[13] J. Li, K. Cho, N. Wu and A. Ignatiev: IEEE Trns. Dielectr. Electr. Insul. Vol. 11 (2004), p.534.

Google Scholar

[14] C.C. Homes, T. Vogt, S.M. Shapiro, S. Wakimoto and A.P. Ramirez: Science Vol. 293 (2001), p.673.

Google Scholar

[15] V.V. Daniel: Dielectric Relaxation (Academic Press, New York 1967).

Google Scholar