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Preparation and Properties of Ni-Si-O Thin Film Prepared by Sol-Gel Method

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Abstract:

Ni-Si-O thin films on Si substrate have been prepared by a sol-gel method. The microstructure and phase composition of the films were investigated by XRD, SEM, FTIR. The XRD results showed that the films are amorphous while annealed at 800oC for 10 min, the SEM imagines proved that the films are smooth and thickness is about 190 nm. Electrical property of the film indicated that the leakage current was as low as 10-6A/cm2 at an electric field of 1MV/cm. The dielectric properties of Ni-Si-O thin films can be improved as increasing the annealed temperature.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Pages:

799-801

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.336-338.799

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Online since:

April 2007

Authors:

Rong Juan Zhao, Yuan Hua Lin, Jing Nan Cai, Ce Wen Nan, Dan Xie

Keywords:

Leakage Current, Ni-So-O, Sol-Gel (SG), Thin Film

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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