Evaluation of Planar-Type Thin Film ZnO Varistors Fabricated Using Pulsed Laser Ablation

Sayuki Sawa; Shinzo Yoshikado

doi:10.4028/www.scientific.net/KEM.320.109

Paper Titles

Synthesis of Oxide Thin Films on Silicon Substrate Using Supercritical Carbon Dioxide Fluid
p.91

Fabrication and Application of MoSi₂ Thin Film Electric Heaters
p.95

B- and P-Doped Si_0.8Ge_0.2 Thin Film Deposited by Helicon Sputtering for the Micro-Thermoelectric Gas Sensor
p.99

Defect Structure in (Zn,Mg)O Films Prepared on YSZ Substrate
p.103

Evaluation of Planar-Type Thin Film ZnO Varistors Fabricated Using Pulsed Laser Ablation
p.109

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate
p.113

Relation Between Grain Boundary and Electrical Degradation of ZnO Varistors
p.117

Cathodoluminescence of Diffusion Layer Synthesized by Coupling of β-Ga₂O₃ and ZnO
p.121

Preparation and Dielectric Properties of 3D Barium Titanate Colloidal Sphere Array
p.127

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Evaluation of Planar-Type Thin Film ZnO Varistors Fabricated Using Pulsed Laser Ablation

Abstract:

Planar-type thin film Bi-Mn-Co-doped ZnO varistors were fabricated on a silica glass substrate or a sintered alumina substrate using a visible light (532 nm) pulsed laser ablation method. The deposited thin films were annealed at 800°C or 900°C in air. For the thin films deposited on alumina substrates and then annealed, the contents of Bi and Mn decreased compared with those of the as-deposited films. Voltage-current (V-I) characteristics of the thin-film varistor fabricated on the alumina substrates and annealed showed nonlinearity. The nonlinearity index α was approximately 10 for the thin film deposited on the alumina substrate and annealed at 800°C in air using a target of ZnO doped with 2.5 mol% Bi2O3, 0.5 mol% MnO2 and 0.2 mol% Co3O4. Moreover, the current density of 20 A/cm3 was relatively high for safety use.