Study on Nanolithography Process of Polycrystalline Copper Using Molecular Dynamic Simulation

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Molecular dynamics simulations are performed to verify the effect of grain boundary on nanolithography process. The model with about two hundred thousand copper (Cu) atoms is composed of two different crystal orientations of which contact surfaces are (101) and (001) planes. The grain boundary is located on the center of model and has 45 degreeangle in xz-plane. The tool is made of diamond-like-carbon with the shape of Berkovich indenter. As the tool is indented and plowed on the surface, dislocations are generated. Moreover, during the plowing process, the steps as well as the typical pile-ups are formed in front of the tool. These defects propagate into the surface of the substrate. As the tool approaches to the grain boundary, the defects are seen to be accumulated near the grain boundary. The shape of the grain boundary is also significantly deformed after the tool passes it. We observed the forces exerted on the tool by the contact with substrate, so that the friction coefficients can be obtained to address the effect of the grain boundary on the friction characteristics.

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Key Engineering Materials (Volumes 340-341)

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961-966

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June 2007

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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[1] T. Inamura, N. Takezawa, and Y. Kumaki: Annals of CIRP Vol. 42, No. 1 (1993) p.79.

Google Scholar

[2] R. Komanduri, N. Chandrasekaran, L. M. Raff: Wear Vol. 219 (1998) p.84.

Google Scholar

[3] Y.S. Kim, K.H. Na, C.I. Kim, and J.Y. Park: Metal. Mat. Trans. A Vol. 36 (2005) p.169.

Google Scholar

[4] D. Mullian, S. D. Kenny, and Roger Smith: Physical Review B Vol. 69 (2004) 205407.

Google Scholar

[5] S.K. Jun, Y.M. Lee, S.Y. Kim, and S.Y. Im: Nanotechnology Vol. 15 (2004) p.1169.

Google Scholar

[6] T. Fang, C. Weng, and J. Chang: Materials Science and Engineering A Vol. 357 (2003) p.7.

Google Scholar

[7] Y. Shibutani, A. Koyama, and T. Tsuru, in: IUTAM Symposium on Multiscale Modeling and Characterization of Elastic-Inelastic Behavior of Engineering Materials, edited by S. Ahzi et. al., Kluwer Academic Publisher, Vol. 144 (2002) p.125.

DOI: 10.1007/978-94-017-0483-0_16

Google Scholar

[8] D. Feichtinger, P. M. Derlet, and H. Van Swygenhoven: Phy. Rev. B Vol. 67 (2003) 024113.

Google Scholar

[9] V. Yamakov, D. Wolf, S.R. Phillpot, and H. Gleiter: Acta Materialia Vol. 50 (2002) p.5005.

Google Scholar

[10] Xin-Ling Ma and Wei Yang: Nanotechnology Vol. 14 (2003) p.1208.

Google Scholar

[11] http: /www. cs. sandia. gov/~sjplimp/lammps. html.

Google Scholar

[12] Murray S. Daw and M. I. Baskes: Physical Review Letters Vol. 50, No. 17 (1983) p.1285.

Google Scholar

[13] T. Inamura and N. Takezawa: Annals CIRP Vol. 41 (1992) p.121.

Google Scholar

[14] Cynthia L. Kelchner, S. J. Plimpton, and J. C. Hamilton: Physical Review B Vol. 58, No. 17 (1998) 11085.

Google Scholar

[15] D. Hull and D. J. Bacon: Introduction to Dislocation (Butterworth-Heinemann, UK 2001).

Google Scholar