Prevention of Dicing-Induced Damage in Semiconductor Wafers

Seong Min Lee

doi:10.4028/www.scientific.net/KEM.345-346.485

Paper Titles

Application of the Three-Dimensional Local Hybrid Method to the Structure with a Surface Crack Subjected to Bending Load
p.469

Fatigue Crack Growth Behavior of a Gas Pressure Welded Part of Rail Steel under Mixed Mode Loading
p.473

Vibration Fracture Behavior of Sn-xCu Lead-Free Solders
p.477

Stress and Displacement Fields at a Transient Crack Tip Propagating in Functionally Graded Materials
p.481

Prevention of Dicing-Induced Damage in Semiconductor Wafers
p.485

Development and Application of Slow Crack Propagation of Polyethylene Based on Crack Layer Theory
p.489

Experimental and Theoretical Studies of Slow Crack Growth in Engineering Polymers
p.493

Evaluation of Fracture Toughness Distribution in Ceramic-Metal Functionally Graded Materials
p.497

Finite Element Simulation of Crack Propagation Under Mixed Mode Loading Condition Using Element Removing Method
p.501

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Prevention of Dicing-Induced Damage in Semiconductor Wafers

Abstract:

Semiconductor devices are usually formed on a single silicon wafer during a batch processing method. Individual devices are separated from the wafer during the wafer sawing or dicing step. Subsequent packaging processes are then performed on the individual devices, whose edge portions are very susceptible to mechanical damage from the sawing process. Defects formed along device edges due to the dicing saw blade often provide potential sites for serious reliability problems. If the scribing area is reduced, the number of the separated devices from a single wafer increases, which results in productivity improvement. However, the closer the scribing position of the saw blade comes to the active device pattern, the greater possibility of sawing-induced damage to the active pattern is. Thus, this work shows methods to reduce the negative impact of the saw blade while maintaining close proximity of the scribe lines to the IC devices. In particular, this work suggests that a decrease in the size of the diamond particles embedded in the saw blade and in the rotation speed of the saw blade might contribute to the prevention of sawing-induced damage to device patterns.