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A Model of Gamma-Ray Irradiation Effects in Silicon Dioxide Films and on Silicon Dioxide - Silicon Interface

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Abstract:

The gamma-ray irradiation causes positive charge traps formation in silicon dioxide films and at silicon dioxide - silicon interface of MOS devices, and the threshold voltage shift in MOS transistors. Here, the Monte Carlo model was used to develop an approach for estimating gammaray induced traps spatially distributed in silicon dioxide films. This is combined with the model of energy distributed traps at silicon dioxide - silicon interface. The developed model enables gammaray induced charge and threshold voltage shift determination as a function of gamma-ray doses. The threshold voltage measurements at a single specified current, both of radiation sensitive and radiation hardened MOS transistors irradiated with different doses of gamma-ray are compared with the developed model and good agreement are obtained.

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Periodical:

Materials Science Forum (Volume 555)

Pages:

147-152

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.555.147

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Online since:

September 2007

Authors:

M. Odalović, D. Petković

Keywords:

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Silicon Dioxide, γ-Ray

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] T.P. Ma and P.V. Dressendorfer: Ionizing radiation effects in MOS devices and circuits (Wiley, New York 1989).

Google Scholar

[2] H.L. Hughes and J.M. Benedetto: IEEE Trans. on Nuclear Science Vol. 50 (2003), p.500.

Google Scholar

[3] A.G. Holmes-Siedle: Nuclear Instruments and Methods Vol. 121(1974), p.169.

Google Scholar

[4] M. Pejović, S. Golubović, G. Ristić and M. Odalović: Japan. J. Appl. Phys. Vol. 33 (1994), p.986.

Google Scholar

[5] M. Odalović, B. Vučković, I. Manić and Z. Pavlović: Proc. 21 st International Conference on Microelectronics, Niš, Vol. 1 (1997), p.357.

Google Scholar

[6] Z. Savić and D. Petković: Proc. 18 th Yugoslav Symp. on Radiation Protection, Beograd, May, 1993, pp.139-142.

Google Scholar

[7] T.R. Oldham and F.B. McLean: IEEE Trans. on Nuclear Science Vol. 50 (2003), p.483.

Google Scholar

[8] M. de Almeida and M. Moralles: Brazil. J. of Physics Vol. 35 (2005), p.741.

Google Scholar

[9] S.M. Sze: Physics of semiconductor devices (Wiley, New York 1981).

Google Scholar

[10] J.H. Stathis and S. Zafar: Microelectronics Reliability Vol. 46 (2006), p.270.

Google Scholar

[11] V.S. Pershenkov, S.V. Cherepko, A.V. Sagoyan, V.V. Belyakov, V.N. Ulimov, V.V. Abramov, A.V. Shalnov and V.I. Rusanovsky: IEEE Trans. on Nuclear Science Vol. 43 (1996), p.2579.

DOI: 10.1109/23.556839

Google Scholar

[12] E. Bendada and K. Rais: Eur. Phys. J. AP Vol. 5 (1999), p.91. Fig. 6 Threshold voltage shift vs. dose dependencies for different oxide thicknesses. Experimental results are previously reported in.

Google Scholar

[6] 1 10 100 0 1 2 3 4 5 6 7 8 9 10 pMOS RADFET oxide thickness 110 nm 314 nm 727 nm 1226 nm dots - experiment. lines - calculated Dose [Gy] ∆∆∆∆Vth [V].

Google Scholar