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Bonding and Integration of Silicon Carbide Based Materials for Multifunctional Applications

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Abstract:

Robust bonding and integration technologies are critically needed for the successful implementation of silicon carbide based components and systems in a wide variety of aerospace and ground based applications. These technologies include bonding of silicon carbide to silicon carbide as well as silicon carbide to metallic systems. A diffusion bonding based approach has been utilized for joining of silicon carbide (SiC) to silicon carbide sub-elements for a micro-electro-mechanical systems lean direct injector (MEMS LDI) application. The objective is to join SiC sub-elements to from a leak-free injector that has complex internal passages for the flow and mixing of fuel and air. A previous bonding approach relied upon silica glass-based interlayers that were non-uniform and not leak free. In the newly developed joining approach, titanium foils and physically vapor deposited titanium coatings were used to form diffusion bonds between SiC materials using hot pressing. Microscopy results show the formation of well adhered diffusion bonds. Initial tests show that the bond strength is much higher than required for the component system. Benefits of the joining technology are fabrication of leak free joints with high temperature and mechanical capability.

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Periodical:

Key Engineering Materials (Volume 352)

Pages:

201-206

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.352.201

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Online since:

August 2007

Authors:

Mrityunjay Singh, Michael C. Halbig

Keywords:

Bonding, Diffusion Bonding (DB), Integration, Interfacial Characterization, Microstructure, Silicon Carbide (SiC)

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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