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Formation and Sintering Mechanisms of Reaction Bonded Silicon Carbide-Boron Carbide Composites

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Abstract:

Reaction sintering of boron carbide represents an attractive densification process. In this work, sintering mechanisms of silicon carbide and boron carbide composites were studied. Mixed boron carbide/graphite mixtures were sintered in a vacuumed graphite furnace between 1380 and 1450oC. The samples were in contact with bulk silicon metal which melts at 1410oC. Reaction sequence of the composition was investigated by X-ray diffraction, SEM and TEM. It was found that a reaction between molten silicon and B4C occurred and the reaction produced silicon carbide and silicon-containing boron carbide. Dense composites can be achieved by pressureless sintering at 1450oC and the final microstructure consists of silicon carbide, boron carbide, silicon-containing boron carbide and residual silicon at grain boundaries.

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Periodical:

Key Engineering Materials (Volume 352)

Pages:

207-212

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.352.207

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Online since:

August 2007

Authors:

Zheng Fei Chen, Y.C. Su, Yi Bing Cheng

Keywords:

Boron Carbide, Composite, Electron Microscopy, Silicon Carbide (SiC), Sintering

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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