Investigation on Residual Stress and Crystallographic Texture of YSZ Films Prepared by EB-PVD

Bin Meng; Xiao Dong He; Yue Sun; Ming Wei Li

doi:10.4028/www.scientific.net/KEM.353-358.1667

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Thermodynamic Analysis of EB-PVD Preparing SiC Coating
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Investigation on Residual Stress and Crystallographic Texture of YSZ Films Prepared by EB-PVD
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Investigation on Residual Stress and Crystallographic Texture of YSZ Films Prepared by EB-PVD

Abstract:

Yttria Stabilized Zirconia (YSZ) films were prepared by electron beam physical vapor deposition (EB-PVD) technique with a high deposition rate up to 1μm/min. An improved sin2ψ method was employed to analyze the residual stress of films by means of grazing incidence X-ray diffraction (GIXRD). The result of residual stress measurement reveals that residual stress of YSZ film is compressive stress and keeps a linear relationship with the deposition temperature, which is induced mainly by the thermal expansion mismatch between the film and substrate. The XRD result of films, prepared with different incident angles, demonstrates that the films show preferred orientation evidently. Furthermore, a parameter ωhkl was introduced from the inverse polar figure measurement theory to reveal the degree of preferred orientation clearly. The calculating result of ωhkl value indicates that the preferred orientation of different specimens changes with the incident angles, which is due to columnar growth pattern of films prepared by EB-PVD. In order to characterize the crystallographic texture visually, XRD with 2D detector system was used to analyze the texture of films. The result shows that Debye rings appear asymmetric intensively, which denotes the existence of preferred orientation directly and agrees with the calculating result of ωhkl value.