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Electrical Properties and Microstructures of Ultraviolet Transparent Ga2O3 Thin Films

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Abstract:

The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500 °C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.

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Periodical:

Materials Science Forum (Volumes 561-565)

Pages:

1233-1236

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.561-565.1233

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Online since:

October 2007

Authors:

Yasuhiro Shigetoshi, Susumu Tsukimoto, Hidehisa Takeda, Kazuhiro Ito, Masanori Murakami

Keywords:

Electrical Resistivity, Gallium Oxide, Microstructure, Partial Oxygen Pressure, Sputter Deposition, Thin Film, Transparent

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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