Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering

R.K. Singha; K. Das; S. Das; A. Dhar; S.K. Ray

doi:10.4028/www.scientific.net/AMR.31.89

Paper Titles

Nitrogen Interstitial Defects in GaNAs Films Grown by MOCVD
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Influence of Hydrogen Dilution of Silane on the Properties of nc-Si:H Films Grown by Layer-by-Layer Deposition Technique
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Defect Mediated Photonic Behavior of ZnO Nanocrystals
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Surface Structure Dependent Growth of InAs/InAlAs Quantum Wires on InP(100).
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Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering
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Photoluminescence and Fractal Properties of Diverse Carbothermal Zinc Oxide Nanostructures
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Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser
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Fabrication of Photonic Crystals by Holographic Lithography Method
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Optical and Structural Properties of Multi Deposition Film Derived SiO₂-TiO₂ Systems by Sol-Gel Process
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Characteristics of Ge Nanocrystals Grown by RF...

Characteristics of Ge Nanocrystals Grown by RF Magnetron Sputtering

Abstract:

We report the self-assembled growth of Ge islands of different shapes and sizes on p-Si (001) by r.f. magnetron sputtering by varying the r.f. power, growth temperature and postdeposition annealing condition. The well known Stranski-Krastanov growth mechanism due to lattice mismatch between Si & Ge leads to the formation of Ge islands, similar to a more sophisticated MBE growth, albeit at a much higher pressure in our study. Ge nanocrystals embedded in SiO2 matrix have also been grown. Optical properties of nanocrystals exhibiting visible luminescence at room temperature are presented.