Paper Titles

Impurity and Defect Induced Metastabilities in Tetrahedral Semiconductors
p.447

Theory of Nitrogen and Platelets in Diamond
p.457

Ab Initio Cluster Calculation of Hyperfine Interactions and Total-Energy Surfaces for N in Diamond, Silicon and Germanium
p.463

Pressure Dependence of Formation and Migration Enthalpies for Atomic Diffusion in Si: Conjugate Gradient Minimization of Total Energy
p.469

Many-Electron Effects in the Negative Silicon Vacancy
p.475

Defects and Bandtails in Amorphous Silicon
p.481

Theory of Second-Order Vibronic Reduction Factors for Deep Level Impurieties in Semiconductors
p.487

Donor Bistability Induced by Electron-Phonon Coupling
p.493

The Temperature Dependence of Trap Cross Sections
p.499

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Many-Electron Effects in the Negative Silicon...

Many-Electron Effects in the Negative Silicon Vacancy

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

475-480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.475

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Online since:

January 1992

Authors:

Frederick G. Anderson, Frank S. Ham, G. Grossmann

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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