Paper Titles

Effect of Impurity Addition on PNN Ceramics
p.49

Permittivity Behavior in Multilayered Piezoceramics
p.53

Influence of Qm Values on the Properties of Piezoelectric Transformer
p.57

Joining of Piezoelectric Zinc Oxide
p.61

Tendencies of p-Type Thermoelectric Oxide Semiconductor
p.67

Thermoelectric Properties of Layer-Structured (ZnO)_mIn₂O₃(m=Integer) and Effects of Elemental Substitution
p.71

Nonuniformity of the Electrical Properties in SiC Micro Thermistors
p.75

Sensing Properties of Oxygen Sensor Using Hot Spot on La_0.2Sr_0.8Co_0.8Fe_0.2O_3-δ Ceramic Rod
p.79

Effect of Glass Viscosity and Particle Size on Electric Resistivity of RuO₂-Glass Thick Film
p.83

HomeKey Engineering MaterialsKey Engineering Materials Vols. 169-170Tendencies of p-Type Thermoelectric Oxide...

Tendencies of p-Type Thermoelectric Oxide Semiconductor

Article Preview

Abstract:

You might also be interested in these eBooks

Electroceramics in Japan II

Info:

Periodical:

Key Engineering Materials (Volumes 169-170)

Pages:

67-70

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.169-170.67

Citation:

Cite this paper

Online since:

June 1999

Authors:

S. Nishiyama, T. Ushijima, K. Asakura, Takeshi Hattori

Keywords:

Crystal Structure, Electrical Conductivity, LiNiO₂, Ln₂NiO₄, NaCo₂O₄, Oxide Semiconductor, Thermoelectricity

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: