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HomeMaterials Science ForumMaterials Science Forum Vols. 384-385Weak Localization in SiGe Quantum Wells Doped with...

Weak Localization in SiGe Quantum Wells Doped with Boron

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Ultrafast Phenomena in Semiconductors 2001

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Periodical:

Materials Science Forum (Volumes 384-385)

Pages:

35-38

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.384-385.35

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Online since:

January 2002

Authors:

R. Zobl, E. Gornik, I.V. Altukhov, Natalia Zhdanova, E.G. Landsberg, K.A. Korolev, M.S. Kagan

Keywords:

Negative Magnetoresistance, Quantum Corrections to the Conductivity, Quantum Well

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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