[1]
S.A. Stuart, S. Prawer, P.S. Weiser, Appl. Phys. Lett. 62 (1993), 1227
Google Scholar
[2]
C. Wild, R. Kohl, N. Herres, W. Müller-Sebert, and P. Koidl Diamond and Related Materials 3/4-6 (1994)
DOI: 10.1016/0925-9635(94)90188-0
Google Scholar
[3]
W. R. L. Lambrecht, C. H. Lee. B. Segall, J. C. Angus, Z. Li, and M. Sunkara Nature, 364(6438) (1993) 607
DOI: 10.1038/364607a0
Google Scholar
[4]
P.K. Bachmann, H. Lydtin, MRS Symp. Proc. Vol. 165 (1990) p.181
Google Scholar
[5]
M. Kamo, Y. Sato, S. Matsumoto, N. Setaka, J. Crystal Growth 62 (1982) 642
Google Scholar
[6]
S. Yugo, K. Semoto, T. Kimura: Diamond and Related Materials 5 (1996)
Google Scholar
[7]
I. J. Pugacz, Muraszkiewicz: Detection of Discontinuities in Passivating Layers on Silicon by NaOH Anisotropic Etch, IBM Journal of Research Development, 1972 September, pp.523-529
DOI: 10.1147/rd.165.0523
Google Scholar