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HomeKey Engineering MaterialsKey Engineering Materials Vol. 247Effects of Processing and Doping Elements on the...

Effects of Processing and Doping Elements on the Grain Boundary Microstructure and Mechanical Properties of SiC

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Advanced Ceramics and Composites

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Periodical:

Key Engineering Materials (Volume 247)

Pages:

331-334

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.247.331

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Online since:

August 2003

Authors:

Sadahiro Tsurekawa, Y. Naito, V.S.R. Murthy, Tadao Watanabe, N. Tamari

Keywords:

Coincidence Boundaries, Doping Elements, Grain Growth, Hardness, Hot-Pressing, Silicon Carbide (SiC), Spark Plasma Sintering (SPS)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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